AD8079–SPECIFICATIONS
AD8079A/AD8079B
Parameter Conditions Min Typ Max Units
DYNAMIC PERFORMANCE
–3 dB Small Signal Bandwidth V
IN
= 50 mV rms 260 MHz
Bandwidth for 0.1 dB Flatness V
IN
= 50 mV rms 50 MHz
Large Signal Bandwidth V
IN
= 1 V rms 100 MHz
Slew Rate V
O
= 2 V Step 750 V/µs
V
O
= 4 V Step 800 V/µs
Settling Time to 0.1% V
O
= 2 V Step 40 ns
Rise & Fall Time V
O
= 2 V Step 2.5 ns
NOISE/HARMONIC PERFORMANCE
Total Harmonic Distortion f
C
= 5 MHz, V
O
= 2 V p-p –65 dBc
Crosstalk, Output to Output f = 5 MHz –70 dB
Input Voltage Noise f = 10 kHz 2.0 nV/
Hz
Input Current Noise f = 10 kHz, +In 2.0 pA/
Hz
Differential Gain Error NTSC, R
L
= 150 0.01 %
NTSC, R
L
= 75 0.01 %
Differential Phase Error NTSC, R
L
= 150 0.02 Degree
R
L
= 75 0.07 Degree
DC PERFORMANCE
Offset Voltage, RTO 10 15 mV
T
MIN
–T
MAX
10 20 mV
Offset Drift, RTO 20 µV/°C
+Input Bias Current 3.0 6.0 ±µA
T
MIN
–T
MAX
10 ±µA
Gain No Load 1.998/2.198 2.0/2.2 2.002/2.202 V/V
R
L
= 150 1.995/2.195 2.0/2.2 2.005/2.205 V/V
Gain Matching Channel-to-Channel, No Load 0.1 %
Channel-to-Channel, R
L
= 150 0.5 %
INPUT CHARACTERISTICS
+Input Resistance +Input 10 M
+Input Capacitance +Input 1.5 pF
OUTPUT CHARACTERISTICS
Output Voltage Swing R
L
= 150 2.7 3.1 ±V
R
L
= 75 2.8 ±V
Output Current
1
70 mA
Short Circuit Current
1
85 110 mA
POWER SUPPLY
Operating Range ±3.0 ±6.0 V
Quiescent Current/Both Amplifiers T
MIN
–T
MAX
10.0 11.5 mA
Power Supply Rejection Ratio, RTO +V
S
= +4 V to +6 V, –V
S
= –5 V 49 69 dB
–V
S
= – 4 V to –6 V, +V
S
= +5 V 40 50 dB
+Input Current T
MIN
–T
MAX
0.1 0.5 µA/V
NOTES
1
Output current is limited by the maximum power dissipation in the package. See the power derating curves.
Specifications subject to change without notice.
–2–
REV. A
(@ T
A
= +258C, V
S
= 65 V, R
L
= 100
V
, unless otherwise noted)
9
REV. A
AD8079
–3–
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation
2
Small Outline Package (R) . . . . . . . . . . . . . . . . . . 0.9 Watts
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±V
S
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range . . . . . . . . . . . . .–65°C to +125°C
Operating Temperature Range (A Grade) . . . 40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300°C
NOTES
1
Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Pin SOIC Package: θ
JA
= 160°C/Watt
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8079 is limited by the associated rise in junction tempera-
ture. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition tem-
perature of the plastic, approximately +150°C. Exceeding this
limit temporarily may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of +175°C for an extended
period can result in device failure.
While the AD8079 is internally short circuit protected, this
may not be sufficient to guarantee that the maximum junction
temperature (+150°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the maximum
power derating curves.
MAXIMUM POWER DISSIPATION – Watts
AMBIENT TEMPERATURE –
°
C
2.0
1.5
0
–50 90–40 –30 –20 –10 0 10 20 30 40 50 60 70
1.0
0.5
80
T
J
= +150°C
8-PIN SOIC PACKAGE
Figure 2. Plot of Maximum Power Dissipation vs.
Temperature
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8079 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
ORDERING GUIDE
Temperature Package Package
Model Gain Range Description Option
AD8079AR G = +2.0 –40°C to +85°C 8-Pin Plastic SOIC SO-8
AD8079AR-REEL G = +2.0 –40°C to +85°C REEL SOIC SO-8
AD8079AR-REEL7 G = +2.0 –40°C to +85°C REEL 7 SOIC SO-8
AD8079BR G = +2.2 –40°C to +85°C 8-Pin Plastic SOIC SO-8
AD8079BR-REEL G = +2.2 –40°C to +85°C REEL SOIC SO-8
AD8079BR-REEL7 G = +2.2 –40°C to +85°C REEL 7 SOIC SO-8
AD8079
REV. A
–4–
FREQUENCY – Hz
1M
NORMALIZED FLATNESS – dB
1G10M 100M
–0.5
0.1
0
–0.1
–0.2
–0.3
–0.4
1
0
–9
–1
–2
–3
–4
–5
–6
–7
–8
NORMALIZED FREQUENCY RESPONSE – dB
SIDE 2
SIDE 1
SIDE 2
SIDE 1
R
L
= 100
V
IN
= 50mV rms
50
50
Figure 6. Frequency Response and Flatness
FREQUENCY – Hz
–50
–60
DISTORTION – dBc
–110
10k 100M100k 1M 10M
–70
–80
–100
–90
2ND HARMONIC
3RD HARMONIC
R
L
= 100
Figure 7. Distortion vs. Frequency, R
L
= 100
–60
–90
–120
–100
–110
–80
–70
100k 100M10M1M10k
FREQUENCY – Hz
DISTORTION – dBc
R
L
= 1k
V
OUT
= 2Vp-p
2ND HARMONIC
3RD HARMONIC
Figure 8. Distortion vs. Frequency, R
L
= 1 k
8
7
6
2
1
AD8079
+5V
10µF
0.1µF
50
V
IN
PULSE
GENERATOR
0.1µF
10µF
–5V
R
L
= 100
T
R
/T
F
= 250ps
Figure 3. Test Circuit
20mV
5ns
SIDE 2
SIDE 1
100mV STEP
Figure 4. 100 mV Step Response
200mV
5ns
SIDE 2
SIDE 1
1V STEP
Figure 5. 1 V Step Response

AD8079ARZ-REEL

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
High Speed Operational Amplifiers Dual 260MHz Gain Buffer
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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