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IRF1404L
P1-P3
P4-P6
P7-P9
P10-P11
IRF1404S/L
www.irf.com
7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T
. I
SD
Waveform
D.U.T
. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
+
-
+
+
+
-
-
-
Fig 14.
For N-channel
HEXFET
®
Power MOSFETs
*
V
GS
= 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
R
G
V
DD
•
dv/dt controlled by R
G
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor "D"
•
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
*
IRF1404S/L
8
www.irf.com
D
2
Pak Package Outline
D
2
Pak Part Marking Information
F
530
S
T
H
IS
IS
A
N
IR
F
53
0S
W
IT
H
L
O
T
C
O
DE
8024
A
S
S
E
M
B
L
E
D
O
N W
W
02
, 20
00
I
N
T
H
E
A
S
S
EM
BLY
LI
N
E "
L"
A
SSE
M
BL
Y
LO
T
C
O
D
E
IN
T
E
R
N
A
T
IO
NA
L
RE
C
T
IFIER
LO
G
O
PA
RT
N
U
M
B
E
R
DA
T
E
C
O
DE
Y
E
A
R
0 =
2000
WE
E
K
0
2
LI
N
E L
IRF1404S/L
www.irf.com
9
T
O-262 P
a
r
t Mar
king Information
T
O-262 P
ackage Outline
EX
A
M
P
LE:
T
H
IS
IS
A
N
IR
L
31
0
3L
L
O
T
C
O
DE
1
789
A
SSEM
B
L
Y
PA
R
T
N
U
M
B
E
R
DA
T
E
C
ODE
W
EEK 1
9
LI
N
E
C
L
OT
COD
E
YE
A
R
7 = 1997
A
SSE
M
B
L
ED
O
N
W
W
1
9
,
1
9
9
7
I
N
T
HE A
S
S
E
M
BLY
LI
N
E "
C
"
LO
G
O
REC
T
IF
I
ER
IN
T
E
RNA
T
IO
N
A
L
P1-P3
P4-P6
P7-P9
P10-P11
IRF1404L
Mfr. #:
Buy IRF1404L
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 40V 162A TO-262
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
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