Electrical characteristics STF826
4/12 DocID11748 Rev 2
2 Electrical characteristics
(T
CASE
= 25 °C; unless otherwise specified)
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CES
Collector cut-off current (V
BE
= 0)
V
CE
= -60 V -10 μA
I
CEO
Collector cut-off current (I
B
= 0)
V
CE
= -30 V -100 μA
I
EBO
Emitter cut-off current (I
C
= 0)
V
EB
= -5 V -10 μA
V
(BR)CBO
Collector-base
breakdown voltage (I
E
= 0)
I
C
= -100 μA-60 V
V
(BR)CEO
(1)
Collector-emitter breakdown
voltage (I
B
= 0)
I
C
= -10 mA -30 V
V
(BR)EBO
Collector-emitter breakdown
voltage (I
C
= 0)
I
E
= -100 μA-5 V
V
CE(sat)
(1)
Collector-emitter saturation voltage
I
C
= -1 A, I
B
= -50 mA
I
C
= -2 A, I
B
= -100 mA
I
C
= -3 A, I
B
= -150 mA
-0.4
-0.7
-1.1
V
V
V
V
BE(sat)
(1)
Base-emitter saturation voltage I
C
= -2 A, I
B
= -100 mA -1.2 V
h
FE
DC current gain
I
C
= -100 mA, V
CE
= -2 V
I
C
= -1 A, V
CE
= -2 V
I
C
= -3 A, V
CE
= -2 V
100
80
30
300
f
T
Transistor frequency V
CE
= -10 V, I
c
= -0.1 A 100 MHz
1. Pulsed duration = 300 ms, duty cycle ≤1.5%.
Obsolete Product(s) - Obsolete Product(s)
