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IXFN180N15P

P1-P3P4-P5
IXFN 180N15P
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - picoFarads
C
is
C
os
C
rs
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 25 50 75 100 125 150 175 200 225 250
Q
G
- NanoCoulombs
V
G S
- Volts
V
DS
= 75V
I
D
= 90A
I
G
= 10m A
Fig. 7. Input Admittance
0
25
50
75
100
125
150
175
200
225
250
4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9
V
G S
- Volts
I
D
- Amperes
T
J
= 150
º
C
25
º
C
-40
º
C
Fig. 8. Transconductance
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175 200 225 250
I
D
- Amperes
g
f s
- Siemens
T
J
= -40
º
C
25
º
C
150
º
C
Fig. 9. Source Curre nt vs.
Source-To-Drain Voltage
0
50
100
150
200
250
300
350
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V
S D
- Volts
I
S
- Amperes
T
J
= 150
º
C
T
J
= 25
º
C
Fig. 12. Forw ard-Bias
Safe Operating Area
10
100
1000
1 10 100 1000
V
D S
- Volts
I
D
- Amperes
100µs
1ms
DC
T
J
= 175
º
C
T
C
= 25
º
C
R
DS(on)
Limit
10ms
25
µ
s
© 2006 IXYS All rights reserved
IXFN 180N15P
Fig. 13. Maxim um Transient Therm al Resistance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
R
( t h ) J C
-
ºC / W
IXYS REF: T_180N15P (88) 03-23-06-C.xls
P1-P3P4-P5

IXFN180N15P

Mfr. #:
Buy IXFN180N15P
Manufacturer:
Littelfuse
Description:
MOSFET 180 Amps 150V 0.011 Rds
Lifecycle:
New from this manufacturer.
Delivery:
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