VS-GT120DA65U
www.vishay.com
Vishay Semiconductors
Revision: 23-Oct-17
4
Document Number: 95737
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical IGBT Transfer Characteristics
Fig. 6 - Typical IGBT Gate Threshold Voltage
Fig. 7 - IGBT Reverse BIAS SOA T
J
= 175 °C, V
GE
= 15 V
Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current
Fig. 9 - Typical Diode Forward Characteristics
Fig. 10 - Maximum Diode Continuous Forward Current vs.
Case Temperature
0
10
20
30
40
50
60
70
80
90
100
56789101112
I
C
(A)
V
GE
(V)
T
J
= 25 °C
T
J
= 125 °C
V
CE
= 20 V
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V
GEth
(V)
I
C
(mA)
T
J
= 25 °C
T
J
= 125 °C
1
10
100
1000
10 100 1000
I
C
(A)
V
CE
(V)
0.0001
0.001
0.01
0.1
1
10
0 100 200 300 400 500 600 700
I
CES
(mA)
V
CES
(V)
T
J
= 25 °C
T
J
= 125 °C
T
J
= 175 °C
0
20
40
60
80
100
120
140
160
180
200
220
240
0 0.5 1.0 1.5 2.0 2.5 3.0
I
F
(A)
V
FM
(V)
T
J
= 25 °C
T
J
= 125 °C
T
J
= 175 °C
0
20
40
60
80
100
120
140
160
180
0 20406080100120140
Allowable Case Temperature (°C)
I
F
- Continuous Forward Current (A)
DC
