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IRF9Z34

P1-P3P4-P6P7-P8
IRF9Z34, SiHF9Z34
www.vishay.com
Vishay Siliconix
S16-0754-Rev. C, 02-May-16
1
Document Number: 91092
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
•P-channel
• 175 °C operating temperature
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= -25 V, starting T
J
= 25 °C, L = 1.3 mH, R
g
= 25 , I
AS
= -18 A (see fig. 12).
c. I
SD
-18 A, dI/dt 170 A/μs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
V
DS
(V) -60
R
DS(on)
()V
GS
= -10 V 0.14
Q
g
max. (nC) 34
Q
gs
(nC) 9.9
Q
gd
(nC) 16
Configuration Single
S
G
D
P-Channel MOSFET
TO-220AB
G
D
S
Available
Available
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
IRF9Z34PbF
SiHF9Z34-E3
SnPb
IRF9Z34
SiHF9Z34
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
-60
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at -10 V
T
C
= 25 °C
I
D
-18
AT
C
= 100 °C -13
Pulsed Drain Current
a
I
DM
-72
Linear Derating Factor 0.59 W/°C
Single Pulse Avalanche Energy
b
E
AS
370 mJ
Repetitive Avalanche Current
a
I
AR
-18 A
Repetitive Avalanche Energy
a
E
AR
8.8 mJ
Maximum Power Dissipation T
C
= 25 °C P
D
88 W
Peak Diode Recovery dV/dt
c
dV/dt -4.5 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +175
°C
Soldering Recommendations (Peak temperature)
d
for 10 s 300
Mounting Torque 6-32 or M3 screw
10 lbf · in
1.1 N · m
IRF9Z34, SiHF9Z34
www.vishay.com
Vishay Siliconix
S16-0754-Rev. C, 02-May-16
2
Document Number: 91092
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-62
°C/WCase-to-Sink, Flat, Greased Surface R
thCS
0.50 -
Maximum Junction-to-Case (Drain) R
thJC
-1.7
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= -250 μA -60 - - V
V
DS
Temperature Coefficient V
DS
/T
J
Reference to 25 °C, I
D
= -1 mA - -0.060 - V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA -2.0 - -4.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= -60 V, V
GS
= 0 V - - -100
μA
V
DS
= -48 V, V
GS
= 0 V, T
J
= 150 °C - - -500
Drain-Source On-State Resistance R
DS(on)
V
GS
= -10 V I
D
= -11 A
b
- - 0.14
Forward Transconductance g
fs
V
DS
= -25 V, I
D
= -11 A
b
5.9 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= -25 V,
f = 1.0 MHz, see fig. 5
- 1100 -
pFOutput Capacitance C
oss
-620-
Reverse Transfer Capacitance C
rss
-100-
Total Gate Charge Q
g
V
GS
= -10 V
I
D
= -1 8 A,
V
DS
= -48 V,
see fig. 6 and 13
b
--34
nC Gate-Source Charge Q
gs
--9.9
Gate-Drain Charge Q
gd
--16
Turn-On Delay Time t
d(on)
V
DD
= -30 V, I
D
= -18 A,
R
g
= 12 , R
D
= 1.5, see fig. 10
b
-18-
ns
Rise Time t
r
-120-
Turn-Off Delay Time t
d(off)
-20-
Fall Time t
f
-58-
Internal Drain Inductance L
D
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal Source Inductance L
S
-7.5-
Gate Input Resistance R
g
f = 1 MHz, open drain 0.7 - 3.9
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p -n junction diode
---18
A
Pulsed Diode Forward Current
a
I
SM
---72
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= -18 A, V
GS
= 0 V
b
---6.3V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= -18 A, dI/dt = 100 A/μs
b
- 100 200 ns
Body Diode Reverse Recovery Charge Q
rr
- 0.28 0.52 μC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
D
S
G
S
D
G
IRF9Z34, SiHF9Z34
www.vishay.com
Vishay Siliconix
S16-0754-Rev. C, 02-May-16
3
Document Number: 91092
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 2 - Typical Output Characteristics, T
C
= 175 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
91092_01
20 µs Pulse Width
T
C
= 25 °C
- 4.5 V
- V
DS
, Drain-to-Source Voltage (V)
- I
D
, Drain Current (A)
10
0
10
1
10
2
10
1
10
0
Bottom
To p
V
GS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
10
-1
10
-1
10
0
10
1
- V
DS
,
Drain-to-Source Voltage (V)
- I
D
, Drain Current (A)
Bottom
To p
V
GS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
20 µs Pulse Width
T
C
= 175 °C
91092_02
- 4.5 V
10
2
10
1
10
0
20 µs Pulse Width
V
DS
= - 25 V
10
1
10
0
- I
D
, Drain Current (A)
- V
GS
,
Gate-to-Source Voltage (V)
5678910
4
25 °C
175 °C
91092_03
I
D
= - 18 A
V
GS
= - 10 V
2.5
0.0
0.5
1.0
1.5
2.0
T
J
,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
91092_04
- 60 - 40 - 20 0 20 40
60 80 100
120 140 160
180
2000
1600
1200
800
0
400
10
0
10
1
Capacitance (pF)
- V
DS
,
Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
91092_05
Q
G
, Total Gate Charge (nC)
- V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
0
5
25
2015
10
For test circuit
see figure 13
91092_06
I
D
= - 18 A
V
DS
= - 30 V
V
DS
= - 48 V
35
30
P1-P3P4-P6P7-P8

IRF9Z34

Mfr. #:
Buy IRF9Z34
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 844-IRF9Z34PBF
Lifecycle:
New from this manufacturer.
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