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MRF373ALSR1

P1-P3P4-P6P7-P9P10-P10
N
O
T RE
CO
MMENDED F
O
R NEW DE
S
I
G
N
NOT RECOMMENDED FOR NEW DESIGN
MRF373ALR1 MRF373ALSR1
1
Freescale Semiconductor
RF Product Device Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common source amplifier applica-
tions in 28/32 volt transmitter equipment.
• Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture
Output Power — 75 Watts
Power Gain — 18.2 dB
Efficiency — 60%
• Capable of Handling 10:1 VSWR @ 32 Vdc, 860 MHz,
75 Watts CW Output Power
Features
• Integrated ESD Protection
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal
Impedance Parameters
• Low Gold Plating Thickness on Leads.
L Suffix Indicates 40µ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V
DSS
-0.5, +70 Vdc
Gate- Source Voltage V
GS
-0.5, +15 Vdc
Total Device Dissipation @ T
C
= 25°C MRF373ALR1
Derate above 25°C
MRF373ALSR1
P
D
197
1.12
278
1.59
W
W/°C
W
W/°C
Storage Temperature Range T
stg
-65 to +150 °C
Case Operating Temperature T
C
150 °C
Operating Junction Temperature T
J
200 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case MRF373ALR1
MRF373ALSR1
R
θ
JC
0.89
0.63
°C/W
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 1 (Minimum)
Machine Model MRF373ALR1
MRF373ALSR1
M2 (Minimum)
M1 (Minimum)
Document Number: MRF373A
Rev. 7, 9/2008
Freescale Semiconductor
Technical Data
470- 860 MHz, 75 W, 32 V
LATERAL N- CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B- 05, STYLE 1
NI- 360
MRF373ALR1
CASE 360C- 05, STYLE 1
NI- 360S
MRF373ALSR1
MRF373ALR1
MRF373ALSR1
G
D
S
Freescale Semiconductor, Inc., 2008. All rights reserved.
N
O
T RE
CO
MMENDED F
O
R NEW DE
S
I
G
N
NOT RECOMMENDED FOR NEW DESIGN
2
Freescale Semiconductor
RF Product Device Data
MRF373ALR1 MRF373ALSR1
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Off Characteristics
Drain- Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
=1 µA)
V
(BR)DSS
70 — — Vdc
Zero Gate Voltage Drain Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
I
DSS
— — 1 µAdc
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
— — 1 µAdc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 200 µA)
V
GS(th)
2 2.9 4 Vdc
Gate Quiescent Voltage
(V
DS
= 32 V, I
D
= 100 mA)
V
GS(Q)
2.5 3.3 4.5 Vdc
Drain- Source On- Voltage
(V
GS
= 10 V, I
D
= 3 A)
V
DS(on)
— 0.41 0.45 Vdc
Dynamic Characteristics
Input Capacitance
(V
DS
= 32 V, V
GS
= 0, f = 1 MHz)
C
iss
— 98.5 — pF
Output Capacitance
(V
DS
= 32 V, V
GS
= 0, f = 1 MHz)
C
oss
— 49 — pF
Reverse Transfer Capacitance
(V
DS
= 32 V, V
GS
= 0, f = 1 MHz)
C
rss
— 2 — pF
Functional Characteristics (50 ohm system)
Common Source Power Gain
(V
DD
= 32 V, P
out
= 75 W CW, I
DQ
= 200 mA, f = 860 MHz)
G
ps
16.5 18.2 — dB
Drain Efficiency
(V
DD
= 32 V, P
out
= 75 W CW, I
DQ
= 200 mA, f = 860 MHz)
η 56 60 — %
N
O
T RE
CO
MMENDED F
O
R NEW DE
S
I
G
N
NOT RECOMMENDED FOR NEW DESIGN
MRF373ALR1 MRF373ALSR1
3
Freescale Semiconductor
RF Product Device Data
Figure 1. MRF373ALR1/ALSR1 Narrowband Test Circuit Component Layout
C14
R1
C7
C1
C9
C8
C10
C2
C3
C6
C5
C16
C15
L1
C13
MRF373A
C4
C11
C12
C17
R3
R2
Rev 01
CUT OUT AREA
V
DD
V
GG
RF INPUT RF OUTPUT
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will
have no impact on form, fit or function of the current product.
Table 5. MRF373ALR1/ALSR1 Narrowband Test Circuit Component Layout Designations and Values
Designation Description
C1, C2 18 pF Chip Capacitors
C3 12 pF Chip Capacitor
C4 1.8 pF Chip Capacitor
C5, C10 51 pF Chip Capacitors
C6 0.3 pF Chip Capacitor (Used only on the MRF373AS)
C7 15 pF Chip Capacitor
C8 10 pF Chip Capacitor
C9 2.7 pF Chip Capacitor
C11 0.5 pF Chip Capacitor
C12 1000 pF Chip Capacitor
C13 39 pF Chip Capacitor
C14, C15 470 pF Chip Capacitors
C16
2.2 mF, 100 V Chip Capacitor
C17
10 mF, 35 V Tantalum Capacitor
L1A 12 nH, Coilcraft
R1, R2 390 Ω, 1/2 W Chip Resistors (2010)
R3 1 kΩ, 1/2 W Chip Resistor (2010)
PCB Arlon GX- 0300- 55, 30 mils, ε
r
= 2.55
P1-P3P4-P6P7-P9P10-P10

MRF373ALSR1

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Description:
RF MOSFET Transistors RF PWR LDMOS 75W NI360S
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