SIR622DP-T1-GE3 Datasheet SIR622DP-T1-GE3 | P1-P3

SiR622DP

www.vishay.com

Vishay Siliconix

S16-0991-Rev. A, 23-May-16

1

Document Number: 75758

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 150 V (D-S) MOSFET

Ordering Information:

SiR622DP-T1-GE3 (lead (Pb)-free and halogen-free)

FEATURES

• ThunderFET

®

technology optimizes balance

of R

DS(on)

, Q

g

, Q

sw

and Q

oss

• 100 % R

g

and UIS tested

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

APPLICATIONS

•Fixed telecom

•DC/DC converter

• Primary and secondary side switch

• Battery management

• Synchronous rectification

Notes

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/doc?73257

). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 54 °C/W.

g. T

C

= 25 °C

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

() MAX. I

D

(A)

g

Q

g

(TYP.)

150

0.0177 at V

GS

= 10 V 51.6

20.7 nC

0.0204 at V

GS

= 7.5 V 48.1

PowerPAK

®

SO-8 Single

Top View

1

6.15 mm

5.15 mm

Bottom View

4

G

3

S

2

S

1

S

D

8

D

6

D

7

D

5

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

DS

150

V

Gate-Source Voltage V

GS

± 20

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

51.6

A

T

C

= 70 °C 41.3

T

A

= 25 °C 12.6

b, c

T

A

= 70 °C 10.1

b, c

Pulsed Drain Current (t = 100 μs) I

DM

100

Continuous Source-Drain Diode Current

T

C

= 25 °C

I

S

60

a

T

A

= 25 °C 5.6

b, c

Single Pulse Avalanche Current

L = 0.1 mH

I

AS

40

Single Pulse Avalanche Energy E

AS

80 mJ

Maximum Power Dissipation

T

C

= 25 °C

P

D

104

W

T

C

= 70 °C 66.6

T

A

= 25 °C 6.25

b, c

T

A

= 70 °C 4

b, c

Operating Junction and Storage Temperature Range T

J

, T

stg

-55 to +150

°C

Soldering Recommendations (Peak temperature)

d, e

260

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYPICAL MAXIMUM UNIT

Maximum Junction-to-Ambient

b, f

t  10 s R

thJA

15 20

°C/W

Maximum Junction-to-Case (Drain) Steady State R

thJC

0.9 1.2

SiR622DP

www.vishay.com

Vishay Siliconix

S16-0991-Rev. A, 23-May-16

2

Document Number: 75758

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= 250 μA 150 - - V

V

DS

Temperature Coefficient V

DS

/T

J

I

D

= 250 μA

- 120 -

mV/°C

V

GS(th)

Temperature Coefficient V

GS(th)

/T

J

--9.7-

Gate-Source Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 2.5 - 4.5 V

Gate-Source Leakage I

GSS

V

DS

= 0 V, V

GS

= ± 20 V - - ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

DS

= 150 V, V

GS

= 0 V - - 1

μA

V

DS

= 150 V, V

GS

= 0 V, T

J

= 70 °C - - 10

On-State Drain Current

a

I

D(on)

V

DS

 5 V, V

GS

= 10 V 50 - - A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 10 V, I

D

= 20 A - 0.0147 0.0177



V

GS

= 7.5 V, I

D

= 15 A - 0.0170 0.0204

Forward Transconductance

a

g

fs

V

DS

= 10 V, I

D

= 20 A - 33 - S

Dynamic

b

Input Capacitance C

iss

V

DS

= 75 V, V

GS

= 0 V, f = 1 MHz

- 1516 -

pFOutput Capacitance C

oss

- 236 -

Reverse Transfer Capacitance C

rss

-10.5-

Total Gate Charge Q

g

V

DS

= 50 V, V

GS

= 10 V, I

D

= 20 A - 27 41

nCV

DS

= 50 V, V

GS

= 7.5 V, I

D

= 20 A

-20.731

Gate-Source Charge Q

gs

-9.2-

Gate-Drain Charge Q

gd

-8.2-

Output Charge Q

oss

V

DS

= 50 V, V

GS

= 0 V - 60 90

Gate Resistance R

g

f = 1 MHz 0.8 1.8 3.5 

Turn-On Delay Time t

d(on)

V

DD

= 50 V, R

L

= 2.5 

I

D

 20 A, V

GEN

= 10 V, R

g

= 1 

-1325

ns

Rise Time t

r

-612

Turn-Off Delay Time t

d(off)

-1836

Fall Time t

f

-612

Turn-On Delay Time t

d(on)

V

DD

= 50 V, R

L

= 2.5 

I

D

 20 A, V

GEN

= 7.5 V, R

g

= 1 

-1632

Rise Time t

r

-714

Turn-Off Delay Time t

d(off)

-1632

Fall Time t

f

-612

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

S

T

C

= 25 °C - - 60

A

Pulse Diode Forward Current (t = 100 μs) I

SM

--100

Body Diode Voltage V

SD

I

S

= 5 A - 0.77 1.1 V

Body Diode Reverse Recovery Time t

rr

I

F

= 20 A, dI/dt = 100 A/μs, T

J

= 25 °C

- 114 225 ns

Body Diode Reverse Recovery Charge Q

rr

- 350 680 nC

Reverse Recovery Fall Time t

a

-55-

ns

Reverse Recovery Rise Time t

b

-59-

SiR622DP

www.vishay.com

Vishay Siliconix

S16-0991-Rev. A, 23-May-16

3

Document Number: 75758

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

10

100

1000

10000

0

20

40

60

80

100

0246810

Axis Title

1st line

2nd line

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

2nd line

V

GS

= 10 V thru 8 V

V

GS

= 7 V

V

GS

= 5 V

V

GS

= 6 V

10

100

1000

10000

0

0.02

0.04

0.06

0.08

0.1

0 20406080100

Axis Title

1st line

2nd line

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

2nd line

V

GS

= 7.5 V

V

GS

= 10 V

10

100

1000

10000

0

2

4

6

8

10

0 6 12 18 24 30

Axis Title

1st line

2nd line

V

GS

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

2nd line

V

DS

= 75V

V

DS

= 25V

V

DS

= 50V

I

D

= 20 A

10

100

1000

10000

0

20

40

60

80

100

0246810

Axis Title

1st line

2nd line

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

2nd line

T

C

= 25 °C

T

C

=-55 °C

T

C

= 125 °C

10

100

1000

10000

0

700

1400

2100

2800

3500

0 20406080100

Axis Title

1st line

2nd line

C - Capacitance (pF)

V

DS

- Drain-to-Source Voltage (V)

2nd line

C

rss

C

oss

C

iss

10

100

1000

10000

0.5

1.0

1.5

2.0

2.5

-50-25 0 255075100125150

Axis Title

1st line

2nd line

R

DS(on)

- On-Resistance (Normalized)

T

J

- Junction Temperature (°C)

2nd line

I

D

= 20 A

V

GS

= 10 V

V

GS

= 7.5 V

SIR622DP-T1-GE3

SIR622DP-T1-GE3

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