2N5415
2N5416
SILICON PNP TRANSISTORS
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DESCRIPTION
The 2N5415, 2N5416 are high voltage silicon
epitaxial planar PNP transistors in Jedec TO-39
metal case designed for use in consumer and
industrial line-operated applications.
These devices are particularly suited as drivers in
high-voltage low current inverters, switching and
series regulators.
INTERNAL SCHEMATIC DIAGRAM
December 2000
TO-39
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
2N5415 2N5416
V
CBO
Collector-Base Voltage (I
E
= 0) -200 -350 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) -200 -300 V
V
EBO
Emitter-Base Voltage (I
C
= 0) -4 -6 V
I
C
Collector Current -1 A
I
B
Base Current -0.5 A
P
tot
Total Dissipation at T
c
≤ 25
o
C
10 W
P
tot
Total Dissipation at T
amb
≤ 50
o
C
1W
T
stg
Storage Temperature -65 to 200
o
C
®
1/4
