SI7138DP-T1-E3 Datasheet SI7138DP-T1-E3, SI7138DP-T1-GE3 | P1-P3

Vishay Siliconix

Si7138DP

Document Number: 73530

S11-0212-Rev. C, 14-Feb-11

www.vishay.com

1

N-Channel 60 V (D-S) Reduced Q

gd

, Fast Switching MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Low Thermal Resistance PowerPAK

®

Package

• 100 % R

g

and Avalanche Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Primary Side Switch

- Very Low R

g

and Q

gd

, Critical for Minimizing Losses

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)

I

D

(A)

a

Q

g

(Typ.)

60

0.0078 at V

GS

= 10 V

30

55

0.009 at V

GS

= 6 V

30

Ordering Information: Si7138DP-T1-E3 (Lead (Pb)-free)

Si7138DP-T1-GE3 (Lead (Pb)-free) and Halogen-free)

rdering Information:

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK SO-8

Bottom View

N-Channel MOSFET

G

D

S

Notes:

a. Package limited.

b. Surface mounted on 1” x 1” FR4 board.

c. t = 10 s.

d. See solder profile (

www.vishay.com/ppg?73461). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 65 °C/W.

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage

V

DS

60

V

Gate-Source Voltage

V

GS

± 20

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

30

A

T

C

= 70 °C

30

T

A

= 25 °C

19.7

b, c

T

A

= 70 °C

15.7

b, c

Pulsed Drain Current

I

DM

80

Continuous Source-Drain Diode Current

T

C

= 25 °C

I

S

30

a

T

A

= 25 °C

4.5

b, c

Avalanche Current

L = 0.1 mH

I

AS

43

Single-Pulse Avalanche Energy

E

AS

93 mJ

Maximum Power Dissipation

T

C

= 25 °C

P

D

96

W

T

C

= 70 °C

61.5

T

A

= 25 °C

5.4

b, c

T

A

= 70 °C

3.5

b, c

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

d, e

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, f

t ≤ 10 s

R

thJA

18 23

°C/W

Maximum Junction-to-Case (Drain) Steady State

R

thJC

1.0 1.5

www.vishay.com

2

Document Number: 73530

S11-0212-Rev. C, 14-Feb-11

Vishay Siliconix

Si7138DP

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= 1 mA

60 V

V

DS

Temperature Coefficient ΔV

DS

/T

J

I

D

= 250 µA

60.5

mV/°C

V

GS(th)

Temperature Coefficient ΔV

GS(th)

/T

J

- 8.4

Gate-Source Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

24

Gate-Source Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 20 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 60 V, V

GS

= 0 V

1

µA

V

DS

= 60 V, V

GS

= 0 V, T

J

= 55 °C

10

On-State Drain Current

a

I

D(on)

V

DS

≥ 5 V, V

GS

= 10 V

30 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 10 V, I

D

= 19.7 A

0.0065 0.0078

Ω

V

GS

= 6 V, I

D

= 18 A

0.0073 0.009

Forward Transconductance

a

g

fs

V

DS

= 15 V, I

D

= 19.7 A

84 S

Dynamic

b

Input Capacitance

C

iss

V

DS

= 30 V, V

GS

= 0 V, f = 1 MHz

6900

pFOutput Capacitance

C

oss

470

Reverse Transfer Capacitance

C

rss

200

Total Gate Charge

Q

g

V

DS

= 30 V, V

GS

= 10 V, I

D

= 19.7 A

90 135

nC

V

DS

= 30 V, V

GS

= 6 V, I

D

= 19.7 A

55 83

Gate-Source Charge

Q

gs

27.5

Gate-Drain Charge

Q

gd

11

Gate Resistance

R

g

f = 1 MHz 0.6 0.9 Ω

Tur n - O n Delay Tim e

t

d(on)

V

DD

= 30 V, R

L

= 3 Ω

I

D

≅ 10 A, V

GEN

= 6 V, R

g

= 1 Ω

47 70

ns

Rise Time

t

r

120 180

Turn-Off Delay Time

t

d(off)

40 60

Fall Time

t

f

815

Tur n - O n Delay Tim e

t

d(on)

V

DD

= 30 V, R

L

= 3 Ω

I

D

≅ 10 A, V

GEN

= 10 V, R

g

= 1 Ω

25 40

Rise Time

t

r

12 20

Turn-Off Delay Time

t

d(off)

50 75

Fall Time

t

f

815

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

I

S

T

C

= 25 °C

30

A

Pulse Diode Forward Current

a

I

SM

80

Body Diode Voltage

V

SD

I

S

= 2.7 A

0.8 1.2 V

Body Diode Reverse Recovery Time

t

rr

I

F

= 10 A, dI/dt = 100 A/µs, T

J

= 25 °C

45 70 ns

Body Diode Reverse Recovery Charge

Q

rr

80 120 nC

Reverse Recovery Fall Time

t

a

30

ns

Reverse Recovery Rise Time

t

b

15

Document Number: 73530

S11-0212-Rev. C, 14-Feb-11

www.vishay.com

3

Vishay Siliconix

Si7138DP

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

6 V

0

10

20

30

40

50

60

70

80

0.0 0.3 0.6 0.9 1.2 1.5

3 V

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

4 V

5 V

10 V thru 7 V

V

GS

= 6 V

V

GS

= 10 V

0 20406080

I

D

- Drain Current (A)

R

DS(on)

0.0060

0.0064

0.0068

0.0072

0.0076

0.0080

0

2

4

6

8

10

0 20406080100

I

D

= 19.7 A

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

V

DS

= 30 V

V

DS

= 48 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

- 55 °C

0

4

8

12

16

20

012345

T

C

= 125 °C

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

25 °C

C

rss

0

2000

4000

6000

8000

0 102030405060

C

oss

C

iss

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50 - 25 0 25 50 75 100 125 150

V

GS

= 10,6 V

T

J

- Junction Temperature (°C)

R

DS(on)

- On-Resistance

(Normalized)

I

D

= 19.7 A

SI7138DP-T1-E3

SI7138DP-T1-E3

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