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SI7138DP-T1-GE3

P1-P3P4-P6P7-P7
www.vishay.com
4
Document Number: 73530
S11-0212-Rev. C, 14-Feb-11
Vishay Siliconix
Si7138DP
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
10
100
T
J
= 25 °C
T
J
= 150 °C
1.2
1.7
2.2
2.7
3.2
3.7
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
T
J
- Temperature (°C)
V
GS(th)
(V)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
45678910
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- Drain-to-Source On-Resistance (Ω)
T
J
= 125 °C
I
D
= 19.7 A
T
J
= 25 °C
0.005
0.010
0.015
0.020
1000
Power (W)
Time (s)
10.10.001 10 1000.01
0
20
40
60
80
100
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 1 0 100
0.01
10
- Drain Current (A) I
D
0.1
T
A
= 25 °C
Single Pulse
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
1 ms
10 ms
100 ms
1 s
10 s
100 µs
DC
Limited by R
DS(on)
*
BVDSS limited
I
D(on)
limited
IDM limited
Document Number: 73530
S11-0212-Rev. C, 14-Feb-11
www.vishay.com
5
Vishay Siliconix
Si7138DP
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
20
40
60
80
100
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
Limited by Package
Power Derating (Junction-to-Case)
Maximum Single Pulse Avalanche Capability
Time (s)
Peak Avalanche Current (A)
100
10
0.000001 0.00001
0.0001
0.001
T
A
=
Lx
I
D
BV - V
DD
80
www.vishay.com
6
Document Number: 73530
S11-0212-Rev. C, 14-Feb-11
Vishay Siliconix
Si7138DP
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73530
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 100010
-1
10
-4
100
0.02
0.2
0.1
0.05
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
1
0.1
0.01
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Case
0.1
Duty Cycle = 0.5
10
-3
10
-2
1
10
-1
10
-4
1
0.1
0.01
0.2
Single Pulse
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.02
0.05
0.5
P1-P3P4-P6P7-P7

SI7138DP-T1-GE3

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Buy SI7138DP-T1-GE3
Manufacturer:
Vishay
Description:
MOSFET N-CH 60V 30A PPAK SO-8
Lifecycle:
New from this manufacturer.
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