Vishay Siliconix
Si2356DS
www.vishay.com
2
Document Number: 62893
S13-1814-Rev. A, 12-Aug-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
40 V
V
DS
Temperature Coefficient V
DS
/T
J
I
D
= 250 µA
43
mV/°C
V
GS(th)
Temperature Coefficient V
GS(th)
/T
J
- 3.8
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
0.6 1.5 V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 12 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 40 V, V
GS
= 0 V
1
µA
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 °C
10
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
10 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
10 V, I
D
= 3.2 A
0.042 0.051
V
GS
4.5 V, I
D
= 3.1 A
0.045 0.054
V
GS
2.5 V, I
D
= 2 A
0.056 0.070
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 3.2 A
13 S
Dynamic
b
Input Capacitance
C
iss
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
370
pFOutput Capacitance
C
oss
50
Reverse Transfer Capacitance
C
rss
17
Total Gate Charge
Q
g
V
DS
= 20 V, V
GS
= 10 V, I
D
= 3.2 A
8.1 13
nC
V
DS
= 20 V, V
GS
= 4.5 V, I
D
= 3.2 A
3.8 5.7
Gate-Source Charge
Q
gs
0.72
Gate-Drain Charge
Q
gd
0.81
Gate Resistance
R
g
f = 1 MHz 0.2 0.7 1.4
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 20 V, R
L
= 7.7
I
D
2.6 A, V
GEN
= 10 V, R
g
= 1
612
ns
Rise Time
t
r
12 20
Turn-Off Delay Time
t
d(off)
13 20
Fall Time
t
f
612
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 20 V, R
L
= 7.7
I
D
2.6 A, V
GEN
= 4.5 V, R
g
= 1
10 20
Rise Time
t
r
52 78
Turn-Off Delay Time
t
d(off)
18 27
Fall Time
t
f
53 80
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
1.4
A
Pulse Diode Forward Current (t = 100 µs)
I
SM
20
Body Diode Voltage
V
SD
I
S
= 2.6 A, V
GS
0 V
0.8 1.2 V
Body Diode Reverse Recovery Time
t
rr
I
F
= 2.6 A, dI/dt = 100 A/µs, T
J
= 25 °C
12 20 ns
Body Diode Reverse Recovery Charge
Q
rr
510nC
Reverse Recovery Fall Time
t
a
8.5
ns
Reverse Recovery Rise Time
t
b
3.5
