I
DD
Specifications
Table 11: DDR3 I
DD
Specifications and Conditions – 2GB (Die Revision G)
Values are for the MT41J256M4 DDR3 SDRAM only and are computed from values specified in the 1Gb (256 Meg x 4) com-
ponent data sheet
Parameter Symbol 1866 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1260 1260 1170 1080 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRE-
CHARGE
I
DD1
1620 1620 1530 1440 mA
Precharge power-down current: Slow exit I
DD2P0
216 216 216 216 mA
Precharge power-down current: Fast exit I
DD2P1
630 540 540 450 mA
Precharge quiet standby current I
DD2Q
810 720 630 630 mA
Precharge standby current I
DD2N
900 810 720 630 mA
Precharge standby ODT current I
DD2NT
1080 990 900 810 mA
Active power-down current I
DD3P
630 630 540 540 mA
Active standby current I
DD3N
900 810 720 720 mA
Burst read operating current I
DD4R
2790 2520 2250 1890 mA
Burst write operating current I
DD4W
2880 2610 2250 1980 mA
Refresh current I
DD5B
3150 3060 3970 2880 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
144 144 144 144 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
180 180 180 180 mA
All banks interleaved read current I
DD7
4680 4410 4230 3510 mA
Reset current I
DD8
252 252 252 252 mA
2GB, 4GB (x72, ECC, SR) 240-Pin DDR3 RDIMM
I
DD
Specifications
PDF: 09005aef8394fb39
jsf18c256_512x72pz.pdf - Rev. I 4/13 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
