© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 5
1 Publication Order Number:
NTMD6P02R2/D
NTMD6P02, NVMD6P02
Power MOSFET
6 A, 20 V, P−Channel SOIC−8, Dual
Features
• Ultra Low R
DS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature Dual SOIC−8 Surface Mount Package
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• These Devices are Pb−Free and are RoHS Compliant
• NVMD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
Applications
• Power Management in Portable and Battery−Powered Products,
i.e.: Cellular and Cordless Telephones, and PCMCIA Cards
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−to−Source Voltage V
DSS
−20 V
Gate−to−Source Voltage − Continuous V
GS
"12 V
Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
R
q
JA
P
D
I
D
I
D
P
D
I
D
I
DM
62.5
2.0
−7.8
−5.7
0.5
−3.89
−40
°C/W
W
A
A
W
A
A
Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
R
q
JA
P
D
I
D
I
D
P
D
I
D
I
DM
98
1.28
−6.2
−4.6
0.3
−3.01
−35
°C/W
W
A
A
W
A
A
Thermal Resistance −
Junction−to−Ambient (Note 3)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
R
q
JA
P
D
I
D
I
D
P
D
I
D
I
DM
166
0.75
−4.8
−3.5
0.2
−2.48
−30
°C/W
W
A
A
W
A
A
Operating and Storage Temperature Range T
J
, T
stg
−55 to
+150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C (V
DD
= −20 Vdc,
V
GS
= −5.0 Vdc, Peak I
L
= −5.0 Apk,
L = 40 mH, R
G
= 25 W)
E
AS
500 mJ
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz. Cu 0.06″ thick single sided), t = 10 seconds.
2. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz. Cu 0.06″ thick single sided), t = steady state.
3. Minimum FR−4 or G−10 PCB, t = steady state.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
6 AMPERES, 20 VOLTS
Device Package Shipping
†
ORDERING INFORMATION
NTMD6P02R2G SOIC−8
(Pb−Free)
2500 / Tape & Ree
D
S
G
P−Channel
SOIC−8
CASE 751
STYLE 11
MARKING DIAGRAM &
PIN ASSIGNMENT
E6P02 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
E6P02
AYWW G
G
1
8
1
8
S1 G1 S2 G2
D1 D1 D2 D2
NVMD6P02R2G SOIC−8
(Pb−Free)
www.onsemi.com
(Note: Microdot may be in either location)
†For information on tape and reel specifications
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D
2500 / Tape & Ree
