Advanced Technical Information
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
1 - 1
© 2000 IXYS All rights reserved IXYS reserves the right to change limits, test conditions and dimensions.
Features
• HiPerFRED
TM
diode chips
- fast reverse recovery
- low operating forward voltage
- low leakage current
- avalanche capability
• Industry Standard package
- with isolated DCB ceramic base plate
- UL registered E72873
Applications
• Topologies
- dual diode with common cathode
- high current single diode with pins 1
and 3 paralleled
• Circuits
- free wheeling diode of choppers,
H-bridges, phaselegs etc.
- secondary rectifier for switched
mode power supplies, welders etc.
010
HiPerFRED
TM
Epitaxial Diode
dual diode, common cathode
MEK 600-04 DA
V
RRM
= 400 V
I
FAVM
= 880 A
t
rr
= 220 ns
V
RSM
V
RRM
Type
V V
400 400 MEK 600-04DA
Symbol Conditions Maximum Ratings
I
FAVM
T
C
= 25°C; rectangular, d = 0.5 880 A
I
FAVM
T
C
= 80°C; rectangular, d = 0.5 575 A
I
FSM
T
VJ
= 25°C; t = 10 ms (50 Hz), sine tbd A
T
VJ
-40...+150 °C
T
stg
-40...+125 °C
P
tot
T
C
= 25°C 1100 W
V
ISOL
50/60 Hz, RMS; I
ISOL
≤ 1 mA 3600 V~
M
d
Mounting torque with screw M5 2.25-2.75/20-25 Nm/lb.in.
Terminal connection torque 4.5-5.5/40-48 Nm/lb.in.
a Allowable acceleration 50 m/s
2
Symbol Conditions Characteristic Values
min. typ. max.
I
R
T
VJ
= 25°CV
R
= V
RRM
6mA
T
VJ
= 125°CV
R
= V
RRM
6mA
V
F
I
F
= 400 A; T
VJ
= 125°C 1.1 V
T
VJ
= 25°C 1.4 V
t
rr
V
R
= 100 V; -di
F
/dt = 900 A/µs 220 ns
I
RM
I
F
= 400 A; T
VJ
= 125°C 80A
R
thJS
0.11 K/W
R
thJC
0.22 K/W
d
S
Creeping distance on surface 12.7 mm
d
A
Strike distance through air 9.6 mm
Weight 150 g
Data according to IEC 60747
Dimensions in mm (1 mm = 0.0394")
1
2
3
12 3
