IXFK48N60Q3 Datasheet IXFX48N60Q3, IXFK48N60Q3 | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 600 V

V

DGR

T

J

= 25°C to 150°C, R

GS

= 1MΩ 600 V

V

GSS

Continuous ±30 V

V

GSM

Transient ±40 V

I

D25

T

C

= 25°C 48 A

I

DM

T

C

= 25°C, Pulse Width Limited by T

JM

120 A

I

A

T

C

= 25°C 48A

E

AS

T

C

= 25°C2J

dv/dt I

S

≤ I

DM

, V

DD

≤ V

DSS

, T

J

≤ 150°C 50 V/ns

P

D

T

C

= 25°C 1000 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6mm (0.062 in.) from Case for 10s 300 °C

T

SOLD

Plastic Body for 10s 260 °C

M

d

Mounting Torque (TO-264) 1.13/10 Nm/lb.in.

F

C

Mounting Force (PLUS247) 20..120 /4.5..27 N/lb.

Weight TO-264 10 g

PLUS247 6 g

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 1mA 600 V

V

GS(th)

V

DS

= V

GS

, I

D

= 4mA 3.5 6.5 V

I

GSS

V

GS

= ±30V, V

DS

= 0V ±200 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V 25 μA

T

J

= 125°C 1 mA

R

DS(on)

V

GS

= 10V, I

D

= 0.5 • I

D25

, Note 1 140 mΩ

HiperFET

TM

Power MOSFETs

Q3-Class

IXFK48N60Q3

IXFX48N60Q3

V

DSS

= 600V

I

D25

= 48A

R

DS(on)

≤≤

≤ 140m

ΩΩ

Ω

t

rr

≤≤

≤ 300ns

DS100348(06/11)

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

G = Gate D = Drain

S = Source Tab = Drain

PLUS247 (IXFX)

Tab

G

D

S

TO-264 (IXFK)

S

G

D

Tab

Features

z

Low Intrinsic Gate Resistance

z

Low Package Inductance

z

Fast Intrinsic Rectifier

z

Low R

DS(on)

and Q

G

Advantages

z

High Power Density

z

Easy to Mount

z

Space Savings

Applications

z

DC-DC Converters

z

Battery Chargers

z

Switch-Mode and Resonant-Mode

Power Supplies

z

DC Choppers

z

Temperature and Lighting Controls

Advance Technical Information

IXFK48N60Q3

IXFX48N60Q3

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 20V, I

D

= 0.5 • I

D25

, Note 1 20 36 S

C

iss

7020 pF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 790 pF

C

rss

70 pF

R

Gi

Gate Input Resistance 0.13 Ω

t

d(on)

37 ns

t

r

11 ns

t

d(off)

40 ns

t

f

9 ns

Q

g(on)

140 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

54 nC

Q

gd

60 nC

R

thJC

0.125 °C/W

R

thCS

0.15 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V 48 A

I

SM

Repetitive, Pulse Width Limited by T

JM

192 A

V

SD

I

F

= I

S

, V

GS

= 0V, Note 1 1.4 V

t

rr

300 ns

Q

RM

2.2 μC

I

RM

15.4

A

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

R

G

= 1Ω (External)

I

F

= 24A, -di/dt = 100A/μs

V

R

= 100V, V

GS

= 0V

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

Terminals: 1 - Gate

2 - Drain

3 - Source

PLUS 247

TM

Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205

A

1

2.29 2.54 .090 .100

A

2

1.91 2.16 .075 .085

b 1.14 1.40 .045 .055

b

1

1.91 2.13 .075 .084

b

2

2.92 3.12 .115 .123

C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840

E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC

L 19.81 20.32 .780 .800

L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 0.244

R 4.32 4.83 .170 .190

Terminals: 1 - Gate

2 - Drain

3 - Source

4 - Drain

Millimeter Inches

Min. Max. Min. Max.

A 4.82 5.13 .190 .202

A1 2.54 2.89 .100 .114

A2 2.00 2.10 .079 .083

b 1.12 1.42 .044 .056

b1 2.39 2.69 .094 .106

b2 2.90 3.09 .114 .122

c 0.53 0.83 .021 .033

D 25.91 26.16 1.020 1.030

E 19.81 19.96 .780 .786

e 5.46 BSC .215 BSC

J 0.00 0.25 .000 .010

K 0.00 0.25 .000 .010

L 20.32 20.83 .800 .820

L1 2.29 2.59 .090 .102

P 3.17 3.66 .125 .144

Q 6.07 6.27 .239 .247

Q1 8.38 8.69 .330 .342

R 3.81 4.32 .150 .170

R1 1.78 2.29 .070 .090

S 6.04 6.30 .238 .248

T 1.57 1.83 .062 .072

Dim.

TO-264 AA Outline

IXFK48N60Q3

IXFX48N60Q3

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

10

20

30

40

50

01234567

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9

V

8

V

7

V

6

V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

20

40

60

80

100

0 5 10 15 20 25 30

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7

V

8

V

9

V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

10

20

30

40

50

0 2 4 6 8 10121416

V

DS

- Volts

I

D

- Amperes

6

V

7V

5V

V

GS

= 10V

8V

Fig. 4. R

DS(on)

Normalized to I

D

= 24A Value vs.

Junction Temperature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

3.4

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 48A

I

D

= 24A

Fig. 5. R

DS(on)

Normalized to I

D

= 24A Value vs.

Drain Current

0.6

1.0

1.4

1.8

2.2

2.6

3.0

0 102030405060708090100110

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maximum Drain Current vs.

Case Temperature

0

5

10

15

20

25

30

35

40

45

50

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

IXFK48N60Q3

IXFK48N60Q3

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