IPB80N06S2L-06
IPP80N06S2L-06
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
2)
Thermal resistance, junction - case
R
thJC
- - 0.6 K/W
Thermal resistance, junction -
ambient, leaded
R
thJA
--62
SMD version, device on PCB
R
thJA
minimal footprint - - 62
6 cm
2
cooling area
5)
--40
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
= 1 mA
55 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=180 µA
1.2 1.6 2.0
Zero gate voltage drain current
I
DSS
V
DS
=55 V, V
GS
=0 V,
T
j
=25 °C
- 0.01 1 µA
V
DS
=55 V, V
GS
=0 V,
T
j
=125 °C
2)
- 1 100
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
- 1 100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=4.5 V, I
D
=69 A
- 6.1 8.4
mΩ
V
GS
=4.5 V, I
D
=69 A,
SMD version
- 5.8 8.1
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V, I
D
=69 A,
- 6.1 6.3 mΩ
V
GS
=10 V, I
D
=69 A,
SMD version
- 4.8 6
Values
Rev. 1.0 page 2 2006-03-13