PAM8013AKR Datasheet PAM8013AKR | P1-P3

PAM8013/PAM8015

Document number: DS36979 Rev. 2 - 2

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May 2014

PAM8013/PAM8015

NEW PRODUCT

A PRODUCT LINE OF

DIODES INCORPORATED

3W MONO CLASS D AUDIO AMPLIFIER

Description

The PAM8013/PAM8015 is a 3W mono filter-less class-D amplifier

with high PSRR and differential input that eliminate noise and

RF rectification.

Features like greater than 90% efficiency and small PCB area make

the PAM8013/PAM8015 Class-D amplifier ideal for portable

applications. The output uses a filter-less architecture minimizing the

number of external components and PCB area whilst providing a high

performance, simple and lower cost system.

The PAM8013/PAM8015 features short circuit protection and thermal

shutdown.

The PAM8013/PAM8015 is available in U-FLGA1515-9 packages.

Features

• Ultra Low EMI, -20dB Better Than FCC Class-B @ 300MHz

• High Efficiency up to 90% @1W with an 8Ω Speaker

• Shutdown Current <1μA

• 3W@10% THD Output with a 4Ω Load at 5V Supply

• Demanding Few External Components

• Superior Low Noise without Input

• Supply Voltage from 2.8V to 5.5V

• Short Circuit Protection

• Thermal Shutdown

• Available in Space Saving U-FLGA1515-9 Packages

• Pb-Free Package

Pin Assignments

IN+

GND

OUT-

VDD

PVDD PGND

A1 A2

A3

B1 B2 B3

IN-

SD

OUT+

C1 C2 C3

U-FLGA1515-9

PAM8013

IN+

PVDD

OUT-

GND GND PGND

A1 A2

A3

B1 B2 B3

IN- SD OUT+

C1 C2 C3

PAM8015

Applications

• Cellular Phones/Smart Phones

• MP4/MP3

• GPS

• Digital Photo Frame

• Electronic Dictionary

• Portable Game Machines

Typical Applications Circuit

OUT-

OUT+

VDD(PAM8013)

0.1 Fμ

VIN

GND

IN+

IN-

SD

0.1 Fμ

1Fμ

PVDD

PGND

V

DD

SD

PAM8013/PAM8015

Document number: DS36979 Rev. 2 - 2

2 of 9

www.diodes.com

May 2014

PAM8013/PAM8015

NEW PRODUCT

A PRODUCT LINE OF

DIODES INCORPORATED

Pin Descriptions

Pin Name PAM8013 PAM8015 Function

IN+ A1 A1 Positive Differential Input

GND A2 B1/B2 Ground

OUT- A3 A3 Negative BTL output

VDD B1 — Power Supply

PVDD B2 A2 Power Supply

PGND B3 B3 Power Ground

IN- C1 C1 Negative Differential Input

SD C2 C2 SD Terminal to Disable the Chip

OUT+ C3 C3 Positive BTL Output

Functional Block Diagram

SD

+

-

PWM

Modulator

SD

UVLO

Startup

Protection

OSC

Bias and

Vref

Gate

Drive

Gate

Drive

SC

Protect

OTP

IN+

IN-

PVDD

OUT+

OUT-

GND

VDD

(PAM8013)

Absolute Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Parameter Rating Unit

Supply Voltage (VDD) 6.0 V

Input Voltage(IN+, IN-, SD)

-0.3 to V

DD

+0.3

V

Storage Temperature -65 to +150 °C

Maximum Junction Temperature 150 °C

Recommended Operating Conditions (@T

A

= +25°C, unless otherwise specified.)

Symbol Parameter Min Max Unit

V

DD

Supply Voltage 2.8 5.5 V

T

A

Operating Ambient Temperature Range -25 85 °C

T

J

Junction Temperature -40 +125 °C

PAM8013/PAM8015

Document number: DS36979 Rev. 2 - 2

3 of 9

www.diodes.com

May 2014

PAM8013/PAM8015

NEW PRODUCT

A PRODUCT LINE OF

DIODES INCORPORATED

Electrical Characteristics (@T

A

= +25°C, V

DD

= 5V, Gain = 18dB, R

L

= L(33μH)+R+L(33μH), unless otherwise noted.)

Symbol Parameter Test Conditions Min Typ Max Unit

VDD Supply Voltage 2.8 5.5 V

Po Output Power

THD+N = 10%, f = 1kHz, R = 4Ω

V

DD

= 5.0V

3.0

W

V

DD

= 3.6V

1.5

V

DD

= 3.2V

1.2

THD+N = 1%, f = 1kHz, R = 4Ω

V

DD

= 5.0V

2.4

W

V

DD

= 3.6V

1.25

V

DD

= 3.2V

1.0

THD+N = 10%, f = 1kHz, R = 8Ω

V

DD

= 5.0V

1.75

W

V

DD

= 3.6V

0.90

V

DD

= 3.2V

0.70

THD+N = 1%, f = 1kHz, R = 8Ω

V

DD

= 5.0V

1.40

W

V

DD

= 3.6V

0.72

V

DD

= 3.2V

0.60

THD+N

Total Harmonic

Distortion Plus

Noise

V

DD

= 5.0V, P

O

= 1W, R = 8Ω

f = 1kHz

0.17

%

V

DD

= 3.6V, P

O

= 0.1W, R = 8Ω

0.16

V

DD

= 3.2V, P

O

= 0.1W, R = 8Ω

0.14

V

DD

= 5.0V, P

O

= 0.5W, R = 4Ω

f = 1kHz

0.14

%

V

DD

= 3.6V, P

O

= 0.2W, R = 4Ω

0.16

V

DD

= 3.2V, P

O

= 0.1W, R = 4Ω

0.17

PSRR

Power Supply Ripple

Rejection

V

DD

= 3.6V, Inputs ac-grounded

with C = 1μF

f = 217Hz

-68

dB

f = 1kHz -70

f = 10kHz -67

Dyn Dynamic Range

V

DD

= 5V,THD = 1%, R = 8Ω

f = 1kHz

95 dB

Vn Output Noise Inputs AC-grounded

No A weighting

170

μV

A-weighting 130

η Efficiency

RL= 8Ω, THD = 10%

f = 1kHz

93

%

RL= 4Ω, THD = 10% 86

IQ Quiescent Current

V

DD

= 5V

No Load

5 mA

Isd Shutdown Current

V

DD

= 2.8V to 5V S

D

= 0V

1 μA

Rdson

Static Drain-to Source

On-state Resistor

High Side PMOS, I = 500mA

V

DD

= 5.0V

325 mΩ

Low Side NMOS, I = 500mA

V

DD

= 5.0V

200 mΩ

fsw Switching Frequency

V

DD

= 2.8V to 5V

400 kHz

Gv Closed-loop Gain

V

DD

= 2.8V to 5V

300K/R

IN

V/V

RIN Input Impedance

V

DD

= 2.8V to 5V

28.5 KΩ

Vos Output Offset Voltage

Input AC-ground, V

DD

= 5V

20 mV

VIH SD Input High Voltage

V

DD

= 5V

1.4

V

VIL SD Input Low Voltage

V

DD

= 5V

1.0

PAM8013AKR

PAM8013AKR

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