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TSM650P03CX RFG

P1-P3P4-P5
TSM650P03CX
30V P-Channel Power MOSFET
1/5
Version: A14
SOT
-
23
Key Parameter Performance
Parameter Value
Unit
V
DS
-30 V
R
DS(on)
(max)
V
GS
=- 10V
65
mΩ
V
GS
= -4.5V
75
V
GS
= -2.5V
100
Q
g
8 nC
Features
● Fast Switching
● Suited for -2.5V Gate Drive Applications
● Halogen-free
Block Diagram
P-Channel MOSFET
Ordering Information
Part No. Package
Packing
TSM650P03CX RFG
SOT-23 3kcs / 7” Reel
Note:
“G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
Absolute Maximum Ratings
(T
C
= 25°C unless otherwise noted)
Parameter Symbol
Limit
Unit
Drain-Source Voltage V
DS
-30
V
Gate-Source Voltage V
GS
±12
V
Continuous Drain Current
T
C
= 25°C
I
D
-4.1
A
T
C
= 100°C
-2.6
A
Pulsed Drain Current
(Note 1)
I
DM
-16.4
A
Power Dissipation @ T
C
= 25℃ P
D
1.56 W
Operating Junction Temperature T
J
150 °C
Storage Temperature Range T
STG
-55 to +150
°C
Thermal Performance
Parameter Symbol Limit Unit
Thermal Resistance - Junction to Ambient R
ӨJA
80 °C/W
Pin Definition:
1. Gate
2. Source
3. Drain
TSM650P03CX
30V P-Channel Power MOSFET
2/5
Version: A14
Electrical Specifications
(T
C
= 25°C unless otherwise noted)
Parameter Conditions Symbol
Min Typ Max
Unit
Static
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= -250µA BV
DSS
-30 -- -- V
Drain-Source On-State Resistance
V
GS
= -10V, I
D
= -4A
R
DS(on)
-- 55 65
mΩ V
GS
= -4.5V, I
D
= -3A
-- 65 75
V
GS
= -2.5V, I
D
= -2A
-- 85 100
Gate Threshold Voltage V
DS
= V
GS
, I
D
= -250µA V
GS(TH)
-0.4 -0.7 -0.9
V
Zero Gate Voltage Drain Current
V
DS
= -30V, V
GS
= 0V
I
DSS
-- -- -1
µA
V
DS
= -24V, T
J
= 125°C -- -- -10
Gate Body Leakage V
GS
= ±12V, V
DS
= 0V I
GSS
-- -- ±100
nA
Forward Transconductance
(Note 2)
V
DS
= -10V, I
D
= -3A g
fs
-- 5.4 -- S
Dynamic
Total Gate Charge
(Note 2,3)
V
DS
= -15V, I
D
= -4A,
V
GS
= -4.5V
Q
g
--
8
--
nC Gate-Source Charge
(Note 2,3)
Q
gs
--
1.9
--
Gate-Drain Charge
(Note 2,3)
Q
gd
--
1.4
--
Input Capacitance
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
C
iss
--
810
--
pF Output Capacitance C
oss
--
85
--
Reverse Transfer Capacitance C
rss
--
50
--
Switching
Turn-On Delay Time
(Note 2,3)
V
DD
= -15V, I
D
= -1A,
V
GS
= -10V, R
GEN
= 6Ω
t
d(on)
--
5.4
--
ns
Turn-On Rise Time
(Note 2,3)
t
r
--
19.4
--
Turn-Off Delay Time
(Note 2,3)
t
d(off)
--
45.9
--
Turn-Off Fall Time
(Note 2,3)
t
f
--
12.4
--
Source-Drain Diode Ratings and Characteristic
Maximum Continuous Drain-Source
Diode Forward Current
Integral reverse diode in
the MOSFET
I
S
-- --
-4.1
A
Maximum Pulse Drain-Source Diode
Forward Current
I
SM
-- --
-16.4
A
Diode-Source Forward Voltage V
GS
= 0V, I
S
= -1A V
SD
-- --
-1
V
Note:
1. Pulse width limited by safe operating area
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%
3. Switching time is essentially independent of operating temperature.
TSM650P03CX
30V P-Channel Power MOSFET
3/5
Version: A14
Electrical Characteristics Curve
Continuous Drain Current vs. T
C
Normalized R
DS
(on) vs. T
J
Threshold Voltage vs. Junction Temperature
Gate Charge Waveform
Normalized Thermal Transient Impedance Curve
Maximum Safe Operating Area
T
C
, Case Temperature (°C)
-I
D
, Continuous Drain Current (A)
Normalized On Resistance (m
W
)
T
J
, Junction Temperature (°C)
Normalized Gate Threshold Voltage (V)
T
J
, Junction Temperature (°C)
-V
GS
,
Gate to Source Voltage (V)
Qg , Gate Charge (nC)
Normalized Thermal Response (R
θJA
)
Square Wave Pulse Duration (s)
-I
D
,
Continuous Drain Current (A)
-V
DS
, Drain to Source Voltage (V)
P1-P3P4-P5

TSM650P03CX RFG

Mfr. #:
Buy TSM650P03CX RFG
Manufacturer:
Taiwan Semiconductor
Description:
MOSFET 30V P channel Power Mosfet
Lifecycle:
New from this manufacturer.
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