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NTP75N03R

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 4
1 Publication Order Number:
NTB75N03R/D
NTB75N03R, NTP75N03R
Power MOSFET
75 Amps, 25 Volts
N−Channel D
2
PAK, TO−220
Features
• Planar HD3e Process for Fast Switching Performance
• Low R
DS(on)
to Minimize Conduction Loss
• Low C
iss
to Minimize Driver Loss
• Low Gate Charge
• Pb−Free Packages are Available
MAXIMUM RATINGS (T
J
= 25°C Unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
25 V
dc
Gate−to−Source Voltage − Continuous V
GS
±20 V
dc
Thermal Resistance − Junction−to−Case
Total Power Dissipation @ T
C
= 25°C
Drain Current
− Continuous @ T
C
= 25°C
− Single Pulse (t
p
= 10 ms)
R
q
JC
P
D
I
D
I
DM
1.68
74.4
75
225
°C/W
W
A
A
Thermal Resistance − Junction−to−Ambient
(Note 1)
Total Power Dissipation @ T
A
= 25°C
Drain Current − Continuous @ T
A
= 25°C
R
q
JA
P
D
I
D
60
2.08
12.6
°C/W
W
A
Thermal Resistance − Junction−to−Ambient
(Note 2)
Total Power Dissipation @ T
A
= 25°C
Drain Current − Continuous @ T
A
= 25°C
R
q
JA
P
D
I
D
100
1.25
9.7
°C/W
W
A
Operating and Storage Temperature Range T
J
, T
stg
−55 to
150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 30 V
dc
, V
GS
= 10 V
dc
, I
L
= 12 A
pk
,
L = 1 mH, R
G
= 25 W)
E
AS
71.7 mJ
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 inch pad size,
(Cu Area 1.127 in
2
).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in
2
).
http://onsemi.com
75 AMPERES
25 VOLTS
R
DS(on)
= 5.6 mW (Typ)
TO−220AB
CASE 221A
STYLE 5
1
2
3
4
MARKING DIAGRAMS
& PIN ASSIGNMENTS
xxxxxxx = Device Code
G = Pb−Free Device
A = Assembly Location
Y = Year
WW = Work Week
P75N03RG
AYWW
1
Gate
3
Source
4
Drain
2
Drain
1
Gate
3
Sourc
e
4
Drain
2
Drain
1
2
3
4
D
2
PAK
CASE 418B
75N03RG
AYWW
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
NTB75N03R, NTP75N03R
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C Unless otherwise specified)
Characteristics
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 V
dc
, I
D
= 250 mA
dc
)
Temperature Coefficient (Positive)
V
(br)DSS
25
−
28
20.5
−
−
V
dc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 20 V
dc
, V
GS
= 0 V
dc
)
(V
DS
= 20 V
dc
, V
GS
= 0 V
dc
, T
J
= 150°C)
I
DSS
−
−
−
−
1.0
10
mA
dc
Gate−Body Leakage Current
(V
GS
= ±20 V
dc
, V
DS
= 0 V
dc
)
I
GSS
− − ±100
nA
dc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250 mA
dc
)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
−
1.5
4.0
2.0
−
V
dc
mV/°C
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 4.5 V
dc
, I
D
= 20 A
dc
)
(V
GS
= 10 V
dc
, I
D
= 20 A
dc
)
R
DS(on)
−
−
8.1
5.6
13
8.0
mW
Forward Transconductance (Note 3)
(V
DS
= 10 V
dc
, I
D
= 15 A
dc
)
g
FS
− 27 −
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 20 V
dc
, V
GS
= 0 V,
f = 1 MHz)
C
iss
− 1333 −
pF
Output Capacitance C
oss
− 600 −
Transfer Capacitance C
rss
− 218 −
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
(V
GS
= 10 V
dc
, V
DD
= 10 V
dc
,
I
D
= 30 A
dc
, R
G
= 3 W)
t
d(on)
− 6.9 −
ns
Rise Time t
r
− 1.3 −
Turn−Off Delay Time t
d(off)
− 18.4 −
Fall Time t
f
− 5.5 −
Gate Charge
(V
GS
= 5 V
dc
, I
D
= 30 A
dc
,
V
DS
= 10 V
dc
) (Note 3)
Q
T
− 13.2 −
nC
Q
1
− 3.3 −
Q
2
− 6.2 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I
S
= 20 A
dc
, V
GS
= 0 V
dc
) (Note 3)
(I
S
= 20 A
dc
, V
GS
= 0 V
dc
, T
J
= 125°C)
V
SD
−
−
0.86
0.73
1.2
−
V
dc
Reverse Recovery Time
(I
S
= 35 A
dc
, V
GS
= 0 V
dc
,
dI
S
/dt = 100 A/ms) (Note 3)
t
rr
− 15.6 −
ns
t
a
− 13.8 −
t
b
− 1.78 −
Reverse Recovery Stored Charge Q
RR
− 0.004 −
mC
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTB75N03R, NTP75N03R
http://onsemi.com
3
10 V
0
0.018
6040
0.014
0.006
0.002
20 100
0.022
14
0
1.6
1.2
1.4
1.0
0.8
0.6
10,000
100,000
010
40
42
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
0
0.018
6040
0.010
0.006
0.002
20 80
Figure 3. On−Resistance versus Drain Current
and Temperature
I
D
, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Temperature
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
140
−50 50250−25 75 125100
23
01510 2
5
5
6
20
60
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
T
J
= 150°C
V
GS
= 10 V
V
GS
= 4.5 V
150
V
GS
= 0 V
I
D
= 30 A
V
GS
= 10 V
80
0.022
V
GS
= 2.5 V
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
100
T
J
= 150°C
T
J
= 125°C
40
0
140
20
60
80
45
T
J
= 25°C
T
J
= −55°C
20
100
8 V
4 V
6 V
3.5 V
5 V
4.5 V
1.8
6
1000
8
100
120
3 V
10
100
120
T
J
= 150°C
120 140
0.014
T
J
= 125°C
80
0.010
120
P1-P3P4-P6P7-P8

NTP75N03R

Mfr. #:
Buy NTP75N03R
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 25V 9.7A TO220AB
Lifecycle:
New from this manufacturer.
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