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Document Number: 74447
S09-1338-Rev. B, 13-Jul-09
Vishay Siliconix
SiE820DF
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter Symbol
Typical Maximum
Unit
Maximum Junction-to-Ambient
a, b
t ≤ 10 s R
thJA
20 24
°C/W
Maximum Junction-to-Case (Drain Top)
a
Steady State
R
thJC
(Drain) 1 1.2
Maximum Junction-to-Case (Source)
a, c
R
thJC
(Source) 2.8 3.4
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 µA
20 V
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= 250 µA
20
mV/°C
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
- 4.8
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
0.6 1.4 2 V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 12 V
± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 20 V, V
GS
= 0 V
1
µA
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
10
On-State Drain Current
a
I
D(on)
V
DS
≥ 5 V, V
GS
= 4.5 V
25 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 4.5 V, I
D
= 18 A
0.0029 0.0035
Ω
V
GS
= 2.5 V, I
D
= 13.4 A
0.0053 0.0064
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 18 A
106 S
Dynamic
b
Input Capacitance
C
iss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
4300
pF
Output Capacitance
C
oss
950
Reverse Transfer Capacitance
C
rss
450
Total Gate Charge Q
g
V
DS
= 10 V, V
GS
= 10 V, I
D
= 20 A
95 143
nC
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 20 A
43 65
Gate-Source Charge
Q
gs
11.5
Gate-Drain Charge
Q
gd
10
Gate Resistance
R
g
f = 1 MHz 1.0 1.5 Ω
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 10 V, R
L
= 1.0 Ω
I
D
≅ 10 A, V
GEN
= 4.5 V, R
g
= 1 Ω
35 55
ns
Rise Time
t
r
115 175
Turn-Off Delay Time
t
d(off)
105 160
Fall Time
t
f
30 45
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 10 V, R
L
= 1.0 Ω
I
D
≅ 10 A, V
GEN
= 10 V, R
g
= 1 Ω
15 25
Rise Time
t
r
35 55
Turn-Off Delay Time
t
d(off)
55 85
Fall Time
t
f
10 15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
50
A
Pulse Diode Forward Current
a
I
SM
80
Body Diode Voltage
V
SD
I
S
= 10 A
0.8 1.2 V
Body Diode Reverse Recovery Time
t
rr
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
101 150 ns
Body Diode Reverse Recovery Charge
Q
rr
100 150 nC
Reverse Recovery Fall Time
t
a
75 ns
Reverse Recovery Rise Time
t
b
25
