Integrated Silicon Solution, Inc. — www.issi.com 13
Rev. D 
08/11/2011
IS61NLF12836A/IS61NVF12836A
IS61NLF25618A/IS61NVF25618A 
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
6.5  7.5
MAX  MAX
Symbol  Parameter  Test Conditions 
Temp. range   x18  x36  x18  x36  Uni
t
Icc AC Operating Device Selected, Com. 175 175 155 155 mA
Supply Current OE = VIh, ZZ VIl, Ind. 180 180 160 160
All Inputs 0.2V or Vdd 0.2V,
Cycle Time tkc min. typ.
(2)
120 110
ISb Standby Current Device Deselected, com. 90 90 90 90 mA
TTL Input Vdd = Max., Ind. 100 100 100 100
All Inputs VIl or VIh,
ZZ VIl, f = Max.
ISbI Standby Current Device Deselected, Com. 70 70 70 70 mA
cmoS Input Vdd = Max., Ind. 75 75 75 75
VIn
VSS + 0.2V or Vdd 0.2V
f = 0 typ.
(2)
40 40
ISb2 Sleep Mode ZZ > VIh Com. 30 30 30 30 mA
Ind. 35 35 35 35
typ.
(2)
20 20
Note:
1. MODE pin has an internal pullup and should be tied to V
dd or VSS. It exhibits ±100 µA maximum leakage current when tied to
V
SS + 0.2V or Vdd – 0.2V.
2. Typical values are measured at V
dd = 3.3V, TA = 25
o
C and not 100% tested.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
3.3V  2.5V
Symbol  Parameter  Test Conditions  Min. Max. Min.  Max. Unit
Voh Output HIGH Voltage Ioh = –4.0 mA (3.3V) 2.4 2.0 V
Ioh = –1.0 mA (2.5V)
Vol Output LOW Voltage Iol = 8.0 mA (3.3V) 0.4 0.4 V
Iol = 1.0 mA (2.5V)
VIh Input HIGH Voltage 2.0 Vdd + 0.3 1.7 Vdd + 0.3 V
VIl Input LOW Voltage
–0.3 0.8 –0.3 0.7 V
IlI Input Leakage Current VSS VIn Vdd
(1)
–5 5 –5 5 µA
Ilo Output Leakage Current
VSS VouT Vddq, OE = VIh –5 5 –5 5 µA
OPERATING RANGE (IS61NVFx)
Range  Ambient Temperature  VDD VDDq
Commercial 0°C to +70°C 2.5V ± 5% 2.5V ± 5%
Industrial -40°C to +85°C 2.5V ± 5% 2.5V ± 5%
14 Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/11/2011
IS61NLF12836A/IS61NVF12836A
IS61NLF25618A/IS61NVF25618A 
3.3V I/O AC TEST CONDITIONS
Parameter  Unit
Input Pulse Level 0V to 3.0V
Input Rise and Fall Times 1.5 ns
Input and Output Timing 1.5V
and Reference Level
Output Load See Figures 1 and 2
317
5 pF
Including
jig and
scope
351
OUTPUT
+3.3V
Figure 1
Figure 2
CAPACITANCE
(1,2)
Symbol  Parameter  Conditions  Max. Unit
cIn Input Capacitance VIn = 0V 6 pF
couT Input/Output Capacitance VouT = 0V 8 pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A = 25°c, f = 1 MHz, Vdd = 3.3V.
3.3V I/O OUTPUT LOAD EQUIVALENT
1.5V
OUTPUT
Zo= 50
50
Integrated Silicon Solution, Inc. — www.issi.com 15
Rev. D 
08/11/2011
IS61NLF12836A/IS61NVF12836A
IS61NLF25618A/IS61NVF25618A 
2.5V I/O AC TEST CONDITIONS
Parameter  Unit
Input Pulse Level 0V to 2.5V
Input Rise and Fall Times 1.5 ns
Input and Output Timing 1.25V
and Reference Level
Output Load See Figures 3 and 4
Z
O
= 50
1.25V
50
OUTPUT
1,667
5 pF
Including
jig and
scope
1,538
OUTPUT
+2.5V
Figure 3
Figure 4
2.5V I/O OUTPUT LOAD EQUIVALENT

IS61NLF12836A-7.5TQI

Mfr. #:
Manufacturer:
ISSI
Description:
SRAM 4Mb 128Kx36 7.5ns Sync SRAM 3.3v
Lifecycle:
New from this manufacturer.
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