SD1127 – RevB 2/06
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SD1127
DESCRIPTION:
The SD1127 is a epitaxial silicon NPN transistor designed
primarily for VHF mobile communications. The chip of this
transistor is mounted on a beryllia pill to isolate the collector
lead and ground the emitter lead for high gain performance
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Collector-Base Voltage 36 V
V
CEO
Collector-Emitter Voltage 18 V
V
CES
Collector-Emitter Voltage 36 V
VEBO Emitter – Base Voltage 4.0 V
IC Collector Current .64 A
Ptot Total Power Dissipation 8.0
T
J
Junction Temperature +200
°C
Thermal Data
R
TH(J-C)
Junction-case Thermal Resistance 21.9
°C/W
1. Collector
2. Base
3. Emitter
TO-39
Features
• 175 MHz
• 12.5 VOLTS
• P
OUT
= 4.0 W MINIMUM
• G
P
= 12.0 dB
• GROUNDED EMITTER
RF & MICROWAVE TRANSISTORS
VHF FM MOBILE APPLICATIONS