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IRLZ24NSTRL

P1-P3P4-P6P7-P9P10-P11
IRLZ24NS/L
HEXFET
®
Power MOSFET
PD - 91358E
l Advanced Process Technology
l Surface Mount (IRLZ24NS)
l Low-profile through-hole (IRLZ24NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 3.3
R
θJA
Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40
Thermal Resistance
°C/W
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 18
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 13 A
I
DM
Pulsed Drain Current  72
P
D
@T
A
= 25°C Power Dissipation 3.8 W
P
D
@T
C
= 25°C Power Dissipation 45 W
Linear Derating Factor 0.30 W/°C
V
GS
Gate-to-Source Voltage ±16 V
E
AS
Single Pulse Avalanche Energy 68 mJ
I
AR
Avalanche Current 11 A
E
AR
Repetitive Avalanche Energy 4.5 mJ
dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ24NL) is available for low-
profile applications.
Description
V
DSS
= 55V
R
DS(on)
= 0.06Ω
I
D
= 18A
2
D Pak
TO-262
S
D
G
5/12/98
l Logic-Level Gate Drive
IRLZ24NS/L
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.061 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.060 V
GS
= 10V, I
D
= 11A
––– ––– 0.075 Ω V
GS
= 5.0V, I
D
= 11A
––– ––– 0.105 V
GS
= 4.0V, I
D
= 9.0A
V
GS(th)
Gate Threshold Voltage 1.0 ––– 2.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 8.3 ––– ––– S V
DS
= 25V, I
D
= 11A
––– ––– 25 V
DS
= 55V, V
GS
= 0V
––– ––– 250 V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 100
nA
V
GS
= 16V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -16V
Q
g
Total Gate Charge ––– ––– 15 I
D
= 11A
Q
gs
Gate-to-Source Charge ––– ––– 3.7 nC V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 8.5 V
GS
= 5.0V, See Fig. 6 and 13 
t
d(on)
Turn-On Delay Time ––– 7.1 ––– V
DD
= 28V
t
r
Rise Time ––– 74 ––– I
D
= 11A
t
d(off)
Turn-Off Delay Time ––– 20 ––– R
G
= 12Ω, V
GS
= 5.0V
t
f
Fall Time ––– 29 ––– R
D
= 2.4Ω, See Fig. 10 
Between lead,
––– –––
and center of die contact
C
iss
Input Capacitance ––– 480 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 130 ––– pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 61 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
nH
I
GSS
R
DS(on)
Static Drain-to-Source On-Resistance
L
S
Internal Source Inductance 7.5
ns
I
DSS
Drain-to-Source Leakage Current
µA
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 11A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 60 90 ns T
J
= 25°C, I
F
= 11A
Q
rr
Reverse Recovery Charge ––– 130 200 nC di/dt = 100A/µs

t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
S
D
G
A
18
72
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Notes:
Uses IRLZ24N data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
I
SD
≤ 11A, di/dt ≤ 290A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
V
DD
= 25V, starting T
J
= 25°C, L = 790µH
R
G
= 25Ω, I
AS
= 11A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
IRLZ24NS/L
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
0.1
1
10
100
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Volta
g
e
(
V
)
DS
A
20
µ
s PULSE WIDTH
T = 25°C
J
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
0.1
1
10
100
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Volta
g
e
(
V
)
DS
A
20
µ
s PULSE WIDTH
T = 175°C
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
J
0.1
1
10
100
2345678910
T = 25°C
J
GS
V , Gate-to-Source Volta
g
e (V)
D
I , Drain-to-Source Current (A)
T = 175°C
J
A
V = 15V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 18A
D
P1-P3P4-P6P7-P9P10-P11

IRLZ24NSTRL

Mfr. #:
Buy IRLZ24NSTRL
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 55V 18A D2PAK
Lifecycle:
New from this manufacturer.
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