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VS-60APH03-N3

P1-P3P4-P6P7-P7
VS-60APH03-N3
www.vishay.com
Vishay Semiconductors
Revision: 10-Jul-15
1
Document Number: 94796
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Hyperfast Rectifier, 60 A FRED Pt
®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• Soft recovery device
• 175 °C operating junction temperature
• Designed and qualified according to
JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
VS-60APH03-N3 series are the state of the art ultrafast
recovery rectifiers designed with optimized performance of
forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for PDP and use in the output
rectification stage for SMPS, UPS, DC/DC converters as
well as freewheeling diodes in low voltage inverters.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package TO-247AC
I
F(AV)
60 A
V
R
300 V
V
F
at I
F
0.85 V
t
rr
typ. 28 ns
T
J
max. 175 °C
Diode variation Single die
Base
cathode
13
Anode
Anode
TO-247AC
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
R
300 V
Continuous forward current I
F(AV)
T
C
= 103 °C 60
A
Single pulse forward current I
FSM
T
J
= 25 °C, 10 ms sine pulse 450
Operating junction and storage temperatures T
J
, T
Stg
-55 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 300 - -
V
Forward voltage V
F
I
F
= 30 A - 1.0 1.25
I
F
= 60 A - - 1.45
I
F
= 30 A, T
J
= 125 °C - 0.85 1.10
I
F
= 60 A, T
J
= 125 °C - - 1.30
Reverse leakage current I
R
V
R
= V
R
rated - - 10
μA
T
J
= 125 °C, V
R
= V
R
rated - - 100
Junction capacitance C
T
V
R
= 300 V - 70 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 3.5 - nH
VS-60APH03-N3
www.vishay.com
Vishay Semiconductors
Revision: 10-Jul-15
2
Document Number: 94796
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current
vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 28 -
ns
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - 34 -
T
J
= 25 °C
I
F
= 60 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-42-
T
J
= 125 °C - 64 -
Peak recovery current I
RRM
T
J
= 25 °C - 3.0 -
A
T
J
= 125 °C - 8.5 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 65 -
nC
T
J
= 125 °C - 273 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range
T
J
, T
Stg
-55 - 175 °C
Thermal resistance,
junction to case
R
thJC
- 0.56 0.80
°C/W
Thermal resistance,
junction to ambient
R
thJA
Typical socket mount - - 40
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and greased - 0.4 -
Approximate Weight
-6.0- g
-0.22- oz.
Mounting torque
6.0 - 12 kgf. cm
(12) - (10) (lbf.in)
Marking device Case style TO-247AC 60APH03
0.3 0.6 0.9 1.2 1.5
1
10
100
1000
T
J
= 25 °C
T
J
= 125 °C
T
J
= 175 °C
V
FM
-
Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
V
R
-
Reverse Voltage (V)
I
R
- Reverse Current (μA)
50 100 150 200 250 300
0.001
0.01
0.1
1
10
100
1000
150 °C
175 °C
25 °C
50 °C
75 °C
125 °C
100 °C
VS-60APH03-N3
www.vishay.com
Vishay Semiconductors
Revision: 10-Jul-15
3
Document Number: 94796
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance
vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature
vs. Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
0 50 100 150 200 250 300
10
100
1000
V
R
-
Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
0.001
0.1
0.01
1
Z
thJC
- Thermal Impedance (°C/W)
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
Single Pulse
(Thermal Resistance)
D = 0.05
D = 0.1
D = 0.2
D = 0.5
D = 0.01
t
1
-
Rectangular Pulse Duration (s)
D = 0.02
0
10
20
30
40
50 60 70
80 90
60
40
80
100
120
140
160
180
DC
Allowable Case Temperature (°C)
I
F(AV)
-
Average
Forward Current (A)
Average Power Loss (W)
I
F(AV)
-
Average
Forward Current (A)
0 10 20 30 40 50 60 70 80 90
0
20
40
60
80
100
120
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
RMS Limit
P1-P3P4-P6P7-P7

VS-60APH03-N3

Mfr. #:
Buy VS-60APH03-N3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 60A 300V Hyperfast 28ns FRED Pt
Lifecycle:
New from this manufacturer.
Delivery:
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