TSM085P03CV RGG Datasheet TSM085P03CV RGG | P1-P3

TSM085P03CV

Taiwan Semiconductor

1 Version: A1605

P-Channel Power MOSFET

-30V, -64A, 8.5mΩ

FEATURES

● Low R

DS(ON)

to minimize conductive losses

● Low gate charge for fast power switching

● 100% UIS and R

g

tested

● Compliant to RoHS directive 2011/65/EU and in

accordance to WEEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● DC-DC Converters

● Battery Power Management

● Load Switch

● BLDC Motor Drives

KEY PERFORMANCE PARAMETERS

PARAMETER

VALUE

UNIT

V

DS

-30

V

R

DS(on)

(max)

V

GS

= -10V

8.5

mΩ

V

GS

= -4.5V

14

Q

g

27

nC

PDFN33

Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020

ABSOLUTE MAXIMUM RATINGS (T

A

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V

DS

-30

V

Gate-Source Voltage

V

GS

±20

V

Continuous Drain Current

(Note 1)

T

C

= 25°C

I

D

-64

A

T

A

= 25°C

-14

Pulsed Drain Current

I

DM

-256

A

Single Pulse Avalanche Current

(Note 2)

I

AS

-23

A

Single Pulse Avalanche Energy

(Note 2)

E

AS

79

mJ

Total Power Dissipation

T

C

= 25°C

P

D

50

W

T

C

= 125°C

10

Total Power Dissipation

T

A

= 25°C

P

D

2.4

W

T

A

= 125°C

0.5

Operating Junction and Storage Temperature Range

T

J

, T

STG

- 55 to +150

°C

THERMAL PERFORMANCE

PARAMETER

SYMBOL

LIMIT

UNIT

Junction to Case Thermal Resistance

R

ӨJC

2.5

°C/W

Junction to Ambient Thermal Resistance

R

ӨJA

53

°C/W

Thermal Performance Note: R

ӨJA

is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-

thermal reference is defined at the solder mounting surface of the drain pins. R

ӨJA

is guaranteed by design while R

ӨCA

is

determined by the user’s board design.

TSM085P03CV

Taiwan Semiconductor

2 Version: A1605

ELECTRICAL SPECIFICATIONS (T

A

= 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP

MAX

UNIT

Static

Drain-Source Breakdown Voltage

V

GS

= 0V, I

D

= -250µA

BV

DSS

-30

--

V

Gate Threshold Voltage

V

GS

= V

DS

, I

D

= -250µA

V

GS(TH)

-1.2

-1.6

-2.5

V

Gate-Source Leakage Current

V

GS

= ±20V, V

DS

= 0V

I

GSS

--

±100

nA

Drain-Source Leakage Current

V

GS

= 0V, V

DS

= -30V

I

DSS

--

-1

µA

V

GS

= 0V, V

DS

= -30V

T

J

= 125°C

--

-100

Drain-Source On-State Resistance

(Note 3)

V

GS

= -10V, I

D

= -14A

R

DS(on)

--

7.1

8.5

mΩ

V

GS

= -4.5V, I

D

= -14A

--

11

14

Forward Transconductance

(Note 3)

V

DS

= -5V, I

D

= -14A

g

fs

--

38

--

S

Dynamic

(Note 4)

Total Gate Charge

V

GS

= -10V,

V

DS

= -15V, I

D

= -14A

Q

g

--

55

--

nC

Total Gate Charge

V

GS

= -4.5V,

V

DS

= -15V, I

D

= -14A

Q

g

--

27

--

Gate-Source Charge

Q

gs

--

9.2

--

Gate-Drain Charge

Q

gd

--

9.9

--

Input Capacitance

V

GS

= 0V, V

DS

= -15V

f = 1.0MHz

C

iss

--

3234

--

pF

Output Capacitance

C

oss

--

396

--

Reverse Transfer Capacitance

C

rss

--

251

--

Gate Resistance

f = 1.0MHz, open drain

R

g

1.6

6

12

Ω

Switching

(Note 4)

Turn-On Delay Time

V

GS

= -10V, V

DS

= -15V,

I

D

= -14A, R

G

= 2Ω,

t

d(on)

--

7.2

--

ns

Turn-On Rise Time

t

r

--

2.6

--

Turn-Off Delay Time

t

d(off)

--

56

--

Turn-Off Fall Time

t

f

--

27

--

Source-Drain Diode

Forward Voltage

(Note 3)

V

GS

= 0V, I

S

= -14A

V

SD

--

-1

V

Reverse Recovery Time

I

S

= -14A ,

dI/dt = 100A/μs

t

rr

--

23

--

ns

Reverse Recovery Charge

Q

rr

--

11

--

nC

Notes:

1. Silicon limited current only.

2. L = 0.3mH, V

GS

= -10V, V

DD

= -25V, R

G

= 25Ω, I

AS

= -23A, Starting T

J

= 25°C

3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.

4. Switching time is essentially independent of operating temperature.

ORDERING INFORMATION

PART NO.

PACKAGE

PACKING

TSM085P03CV RGG

PDFN33

5,000pcs / 13” Reel

TSM085P03CV

Taiwan Semiconductor

3 Version: A1605

CHARACTERISTICS CURVES

(T

A

= 25°C unless otherwise noted)

Output Characteristics

Transfer Characteristics

On-Resistance vs. Drain Current

Gate-Source Voltage vs. Gate Charge

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-Source Voltage

-I

D

, Continuous Drain Current (A)

-V

GS

, Gate to Source Voltage (V)

-I

D

, Continuous Drain Current (A)

-V

DS

, Drain to Source Voltage (V)

R

DS(ON)

, Drain-Source On-Resistance (Ω)

-I

D

, Drain Current (A)

-V

GS

, Gate to Source Voltage (V)

Q

g

, Gate Charge (nC)

R

DS(on)

, Drain-Source On-Resistance

(Normalized)

T

J

, Junction Temperature (°C)

R

DS(on)

, Drain-Source On-Resistance (Ω)

-V

GS

, Gate to Source Voltage (V)

0

2

4

6

8

10

0 10 20 30 40 50 60

V

DS

=-15V

I

D

=-14A

0.4

0.6

0.8

1

1.2

1.4

1.6

-75 -50 -25 0 25 50 75 100 125 150

V

GS

=-10V

I

D

=-14A

0

8

16

24

32

40

0 1 2 3 4

V

GS

=-10V

V

GS

=-7V

V

GS

=-5V

V

GS

=-4.5V

V

GS

=-4V

V

GS

=-3.5V

V

GS

=-2.5V

V

GS

=-3V

0.002

0.004

0.006

0.008

0.01

0.012

0.014

0.016

0 8 16 24 32 40

V

GS

=-10V

V

GS

=-4.5V

0

0.005

0.01

0.015

0.02

0.025

0.03

2 3 4 5 6 7 8 9 10

I

D

=-14A

0

8

16

24

32

40

0 1 2 3 4

25℃

-55℃

150℃

TSM085P03CV RGG

TSM085P03CV RGG

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