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DMG4435SSS-13

P1-P3P4-P6
DMG4435SSS
Document number: DS32041 Rev. 5 - 2
1 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG4435SSS
NEW PRODUCT
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on) max
I
D
T
A
= +25°C
-30V
16m @ V
GS
= -20V
-7.3A
20m @ V
GS
= -10V
-6.0A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Power management functions
Backlighting
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMG4435SSS-13 SO-8 2500 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Top View
Top View
Internal Schematic
SO-8
DS
D
D
D
S
S
G
D
S
G
Equivalent circuit
Chengdu A/T Site Shanghai A/T Site
= Manufacturer’s Marking
G4435SS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1 4
8 5
G4435SS
WW
YY
1 4
8 5
G4435SS
WW
YY
e3
DMG4435SSS
Document number: DS32041 Rev. 5 - 2
2 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG4435SSS
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage
V
DSS
-30 V
Gate-Source Voltage
V
GSS
±25 V
Continuous Drain Current (Note 5) V
GS
= -20
Steady State
T
A
= +25°C
T
A
= +70°C
I
D
-7.3
-5.7
A
t < 10s
T
A
= +25°C
T
A
= +70°C
I
D
-10
-7.5
A
Pulsed Drain Current (Note 6)
I
DM
-80 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
T
A
= +25°C
P
D
2.5 W
T
A
= +70°C
1.5 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C
Steady state
R
θJA
96.5 °C/W
t < 10s 55 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-30
—
— V
V
GS
= 0V, I
D
= -1mA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — -1.0 µA
V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±100 nA
V
GS
= ±25V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-1.0 -1.7 -2.5 V
V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance
R
DS (ON)
—
13 16
mΩ
V
GS
= -20V, I
D
= -11A
15 20
V
GS
= -10V, I
D
= -10A
21 29
V
GS
= -5V, I
D
= -5A
Forward Transfer Admittance
|Y
fs
|
— 22 — S
V
DS
= -5V, I
D
= -10A
Diode Forward Voltage
V
SD
—
-0.74 -1.0 V
V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 1614 — pF
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
226
—
pF
Reverse Transfer Capacitance
C
rss
—
214
—
pF
Gate Resistance
R
g
—
6.8
—
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge at 10V
Q
g
— 35.4 — nC
V
GS
= -10V, V
DS
= -15V, I
D
= -10A
Total Gate Charge at 5V
Q
g
—
18.9
—
nC
V
GS
= -5V, V
DS
= -15V,
I
D
= -10A
Gate-Source Charge
Q
gs
—
4.6
—
nC
Gate-Drain Charge
Q
gd
— 5.7 — nC
Turn-On Delay Time
t
D(on)
—
8.6
—
ns
V
DS
= -15V, V
GS
= -10V,
R
L
= 1.5Ω, R
GEN
= 3Ω,
Turn-On Rise Time
t
r
—
12.7
—
ns
Turn-Off Delay Time
t
D(off)
— 44.9 — ns
Turn-Off Fall Time
t
f
—
22.8
—
ns
Notes: 5. Device mounted on 1in. x 1in. FR-4 PCB with 2oz. Copper, and the testing is based on the t<10s. The value in any given application depends on the
user’s specific board design.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG4435SSS
Document number: DS32041 Rev. 5 - 2
3 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG4435SSS
NEW PRODUCT
0
5
10
15
20
25
30
0 0.5 1 1.5 2
Fig. 1 Typical Output Characteristic
-V , DRAIN-SOURCE VOLTAGE (V)
DS
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
V = -2.5V
GS
V = -2.2V
GS
V = -3.5V
GS
V = -3.0V
GS
V = -4.5V
GS
V = -4.0V
GS
V = -10V
GS
0 0.5 1 1.5 2 2.5 3 3.5 4
Fig. 2 Typical Transfer Characteristic
-V , GATE-SOURCE VOLTAGE (V)
GS
0
5
10
15
20
25
30
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -5V
DS
0
0.01
0.02
0.03
0.04
0.05
0 5 10 15 20 25 30
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
-I , DRAIN-SOURCE CURRENT (A)
D
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
V = -4.5V
GS
V = -10V
GS
0
0.01
0.02
0.03
0.04
0.05
0.06
0 5 10 15 20 25 30
-I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -4.5V
GS
0.6
0.8
1.0
1.2
1.4
1.6
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DSON
V = -10V
I = -20A
GS
D
V = -4.5V
I = -10A
GS
D
0
0.01
0.02
0.03
0.04
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DSON
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V = -10V
I = -20A
GS
D
V = -4.5V
I = -10A
GS
D
P1-P3P4-P6

DMG4435SSS-13

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Manufacturer:
Diodes Incorporated
Description:
MOSFET MOSFET,P-CHANNEL
Lifecycle:
New from this manufacturer.
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