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LQA12T300C

P1-P3P4-P6P7-P8
LQA12T300C, LQA12B300C
Qspeed
™
Family
300 V, 12 A Q-Series Common-Cathode Diode
www.powerint.com January 2011
Product Summary
I
F(AVG)
per diode 6 A
V
RRM
300 V
Q
RR
(Typ at 125 °C) 27 nC
I
RRM
(Typ at 125 °C) 1.87 A
Softness t
b
/t
a
(Typ at 125 °C) 0.7
TO-220AB TO-263AB
LQA12T300C LQA12B300C
RoHS Compliant
Package uses Lead-free plating and “Green” mold
compound Halogen free per IEC 61249-2-21.
General Description
This device has the lowest Q
RR
of any 300 V
Silicon diode. Its recovery characteristics
increase efficiency, reduce EMI and eliminate
snubbers.
Applications
• AC/DC and DC/DC output rectification
• Output & freewheeling diodes
• Motor drive circuits
• DC-AC inverters
Features
• Low Q
RR
, Low I
RRM
, Low t
RR
• High dI
F
/dt capable (1000A/µs)
• Soft recovery
Benefits
• Increases efficiency
• Eliminates need for snubber circuits
• Reduces EMI filter component size & count
• Enables extremely fast switching
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional
operation under these conditions is not implied.
Symbol Parameter Conditions Rating Units
V
RRM
Peak repetitive reverse voltage 300 V
I
F(AVG)
Average forward current Per Diode, T
J
= 150 °C, T
C
= 117°C 6 A
Per Device, T
J
= 150 °C, T
C
= 117°C 12 A
I
FSM
Non-repetitive peak surge current Per Diode, 60 Hz, ½ cycle 37 A
I
FSM
Non-repetitive peak surge current
Per Diode, ½ cycle of t = 28 µs Sinusoid,
T
C
= 25 °C
350 A
T
J
Maximum junction temperature 150 °C
T
STG
Storage temperature –55 to 150 °C
Lead soldering temperature Leads at 1.6mm from case, 10 sec 300 °C
P
D
Power dissipation T
C
= 25 °C 33.8 W
Thermal Resistance
Symbol Resistance from: Conditions Rating Units
R
θ
JA
Junction to ambient TO-220AB (only) 62 °C/W
Per Diode 3.7 °C/W
R
θ
JC
Junction to case
Per Device 1.9 °C/W
Pin Assignment
A1
K
A2
A1
K
A2
www.powerint.com Rev 1.2 01/11
LQA12T300C, LQA12B300C
2
Electrical Specifications at T
J
= 25 °C (unless otherwise specified)
Symbol Parameter Conditions Min Typ Max Units
DC Characteristics per diode
I
R
Reverse current per diode V
R
= 300 V, T
J
= 25 °C - - 25
µA
V
R
= 300 V, T
J
= 125 °C - 0.24 - mA
V
F
Forward voltage per diode I
F
= 6 A, T
J
= 25 °C - 1.6 1.9 V
I
F
= 6 A, T
J
= 150 °C - 1.34 - V
C
J
Junction capacitance per
diode
V
R
= 10 V, 1 MHz - 19 - pF
Dynamic Characteristics per diode
t
RR
T
J
=25 °C - 11.5 - ns
Reverse recovery time,
per diode
dI
F
/dt =200 A/µs
V
R
=200, I
F
=6 A
T
J
=125 °C - 21 - ns
Q
RR
T
J
=25 °C - 8.5 13 nC
Reverse recovery charge,
per diode
dI
F
/dt =200 A/µs
V
R
=200, I
F
=6 A
T
J
=125 °C - 27 - nC
I
RRM
T
J
=25 °C - 1.15 1.6 A
Maximum reverse
recovery current, per
diode
dI
F
/dt =200 A/µs
V
R
=200, I
F
=6 A
T
J
=125 °C - 1.87 - A
S T
J
=25 °C - 0.7 -
Softness per diode=
a
b
t
t
dI
F
/dt =200 A/µs
V
R
=200, I
F
=6 A
T
J
=125 °C - 0.7 -
Note to component engineers: Q-Series diodes employ Schottky technologies in their design and construction.
Therefore, component engineers should plan their test setups to be similar to traditional Schottky test setups.
(For further details, see application note AN-300.)
Figure 1. Reverse Recovery Definitions
Figure 2. Reverse Recovery Test Circuit
Pulse generator
Rg
Q1
VR
+
15V
D1
DUT
L1
I
F
dI
F
/dt
I
RRM
t
RR
t
b
t
a
0
0.1xI
RRM
Rev 1.2 01/11 www.powerint.com
LQA12T300C, LQA12B300C
3
Electrical Specifications at T
J
= 25 °C (unless otherwise specified)
0
2
4
6
8
10
12
0.0 0.5 1.0 1.5 2.0
V
F
(V)
I
F
(A)
Tj=125C
Tj=25C
Figure 3. Typical I
F
vs V
F
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
F
(V)
I
F
(A)
Tj=125C
Tj=25C
Figure 4. Typical I
F
vs V
F
0
10
20
30
40
50
60
70
80
0 20 40 60 80 100 120 140 160 180
V
R
(V)
C
j
(pF)
Figure 5. Typical Typical C
j
vs V
R
0
2
4
6
8
10
12
14
16
18
20
25 50 75 100 125 150
Case Temperature, T
C
(
o
C)
I
F(AV)
(A)
Figure 6. Typical DC Current Derating Curve
0
5
10
15
20
25
30
35
40
45
01234567
I
F
(A)
Q
RR
(nC)
dI
F
/dt=200A/us
dI
F
/dt=500A/us
Figure 7. Typical Q
RR
vs I
F
at T
j
=125 °C
0
5
10
15
20
25
30
01234567
I
F
(A)
t
RR
(ns)
dI
F
/dt=200A/us
dI
F
/dt=500A/us
Figure 8. t
RR
vs I
F
at T
j
=125 °C
P1-P3P4-P6P7-P8

LQA12T300C

Mfr. #:
Buy LQA12T300C
Manufacturer:
Power Integrations
Description:
Diodes - General Purpose, Power, Switching Q-Series 300V 6A Dual Ultra-Low Qrr
Lifecycle:
New from this manufacturer.
Delivery:
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