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STN4NF03L

P1-P3P4-P6P7-P9P10-P12
Electrical characteristics STN4NF03L
4/12
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250 µA, V
GS
= 0
30 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= max rating,
V
DS
= max rating @125 °C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±16 V
± 100 nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
1V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10 V, I
D
= 2 A
V
GS
= 5 V, I
D
= 2 A
0.039
0.046
0.05
0.06
Ω
Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward transconductance
V
DS
= 10 V
,
I
D
= 1 A
36 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25 V, f=1 MHz, V
GS
= 0
330
90
40
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 24 V, I
D
= 4 A
V
GS
=10 V
(see Figure 14)
6.5
3.2
2
9nC
nC
nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on delay time
rise time
V
DD
= 15 V, I
D
= 2 A,
R
G
= 4.7 Ω, V
GS
= 4.5 V
(see Figure 15)
11
100
ns
ns
t
d(off)
t
f
Turn-off-delay time
fall time
V
DD
= 15 V, I
D
= 2 A,
R
G
= 4.7 Ω, V
GS
= 4.5 V
(see Figure 15)
35
22
ns
ns
STN4NF03L Electrical characteristics
5/12
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max Unit
I
SD
Source-drain current 6.5 A
I
SDM
(1)
1. Pulse width limited by safe operating area.
Source-drain current (pulsed) 26 A
V
SD
(2)
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
I
SD
= 6.5 A, V
GS
= 0
1.5 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 6.5 A,
di/dt = 100 A/µs,
V
DD
= 15 V, Tj=150 °C
(see Figure 15)
34
25
1.4
ns
nC
A
Electrical characteristics STN4NF03L
6/12
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance junction-PCB
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Transconductance Figure 7. Static drain-source on resistance
P1-P3P4-P6P7-P9P10-P12

STN4NF03L

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Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 30 Volt 6.5 Amp
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New from this manufacturer.
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