IRFH5215PbF
2 www.irf.com© 2015 International Rectifier Submit Datasheet Feedback March 16, 2015
S
D
G
Thermal Resistance
Parameter Typ. Max. Units
θJC
––– 1.2
θJC
––– 15
°C/W
θ
JA
––– 35
θJA
––– 22
J
= 25°C (unless otherwise specified)
DSS
Drain-to-Source Breakdown Voltage 150 ––– ––– V
DSS
J
Breakdown Voltage Temp. Coefficient ––– 0.19 ––– V/°C
DS(on)
Static Drain-to-Source On-Resistance ––– 45.5 58
m
GS(th)
Gate Threshold Voltage 3.0 ––– 5.0 V
GS(th)
Gate Threshold Voltage Coefficient ––– -12 ––– mV/°C
DSS
Drain-to-Source Leakage Current ––– ––– 20
––– ––– 250
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 21 ––– ––– S
g
Total Gate Charge ––– 21 32
gs1
Pre-Vth Gate-to-Source Charge ––– 7.2 –––
gs2
Post-Vth Gate-to-Source Charge ––– 2.2 –––
gd
Gate-to-Drain Charge ––– 6.7 –––
godr
Gate Charge Overdrive ––– 4.9 –––
sw
gs2
gd
––– 8.9 –––
oss
Output Charge ––– 10 ––– nC
R
G
Gate Resistance ––– 2.3
–––
d(on)
Turn-On Delay Time ––– 6.7 –––
r
Rise Time ––– 6.3 –––
d(off)
Turn-Off Delay Time ––– 11 –––
f
Fall Time ––– 2.9 –––
iss
Input Capacitance ––– 1350 –––
oss
Output Capacitance ––– 120 –––
rss
Reverse Transfer Capacitance ––– 30 –––
Avalanche Characteristics
AS
Single Pulse Avalanche Energy
mJ
AR
A
S
Continuous Source Current
SM
Pulsed Source Current
SD
Diode Forward Voltage ––– ––– 1.3 V
rr
Reverse Recovery Time ––– 40 60 ns
rr
Reverse Recovery Charge ––– 370 555 nC
on
Forward Turn-On Time Time is dominated by parasitic Inductance
MOSFET symbol
nA
ns
A
pF
nC
V
DS
= 75V
–––
V
GS
= 20V
V
GS
= -20V
––– ––– 108
––– ––– 27
V
GS
= 0V, I
D
= 250uA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 16A
96
16
ƒ = 1.0MHz
T
J
= 25°C, I
F
= 16A, V
DD
= 75V
T
J
= 25°C, I
S
= 16A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
–––
R
G
=1.3
Ω
V
DS
= 50V, I
D
= 16A
V
DS
= 150V, V
GS
= 0V, T
J
= 125°C
μA
I
D
= 16A
I
D
= 16A
V
GS
= 0V
V
DS
= 50V
V
DS
= V
GS
, I
D
= 100μA
V
GS
= 10V
V
DS
= 150V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V
V
DD
= 75V, V
GS
= 10V