NSVT3904DXV6T1G

NST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G, SNST3904DXV6T5G
www.onsemi.com
4
TYPICAL TRANSIENT CHARACTERISTICS
Figure 3. Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20
30 40
0.2 0.3 0.5 0.7
C
ibo
C
obo
T
J
= 25°C
T
J
= 125°C
Figure 4. TurnOn Time
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
TIME (ns)
1.0 2.0 3.0 10 20
70
5
100
5.0 7.0 30 50
20
0
10
30
7
20
I
C
/I
B
= 10
t
r
@ V
CC
= 3.0 V
t
d
@ V
OB
= 0 V
40 V
15 V
2.0 V
Figure 5. Rise Time
I
C
, COLLECTOR CURRENT (mA)
t , RISE TIME (ns)
Figure 6. Fall Time
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
1.0 2.0 3.0 10 20
70
5
100
5.0 7.0
30 50
200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20
70
5
100
5.0 7.0
30 50
20
0
10
30
7
20
r
t , FALL TIME (ns)
f
V
CC
= 40 V
I
C
/I
B
= 10
V
CC
= 40 V
I
B1
= I
B2
I
C
/I
B
= 20
I
C
/I
B
= 10
NST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G, SNST3904DXV6T5G
www.onsemi.com
5
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
= 5.0 Vdc, T
A
= 25°C, Bandwidth = 1.0 Hz)
Figure 7. Noise Figure
f, FREQUENCY (kHz)
4
6
8
10
12
2
0.1
Figure 8. Noise Figure
R
S
, SOURCE RESISTANCE (k OHMS)
0
NF, NOISE FIGURE (dB)
1.0 2.0 4.0 10 20
40
0.2 0.4
0
100
4
6
8
10
12
2
14
0.1 1.0 2.0 4.0 10 20
40
0.2 0.4
100
NF, NOISE FIGURE (dB)
f = 1.0 kHz
I
C
= 1.0 mA
I
C
= 0.5 mA
I
C
= 50 mA
I
C
= 100 mA
SOURCE RESISTANCE = 200 W
I
C
= 1.0 mA
SOURCE RESISTANCE = 200 W
I
C
= 0.5 mA
SOURCE RESISTANCE = 500 W
I
C
= 100 mA
SOURCE RESISTANCE = 1.0 k
I
C
= 50 mA
h PARAMETERS
(V
CE
= 10 Vdc, f = 1.0 kHz, T
A
= 25°C)
Figure 9. Current Gain
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 10. Output Admittance
I
C
, COLLECTOR CURRENT (mA)
h , CURRENT GAIN
h , OUTPUT ADMITTANCE ( mhos)
Figure 11. Input Impedance
I
C
, COLLECTOR CURRENT (mA)
Figure 12. Voltage Feedback Ratio
I
C
, COLLECTOR CURRENT (mA)
30
100
50
5
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0
5.0
0.5
10
0.3 0.5 3.0
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , VOLTAGE FEEDBACK RATIO (x 10 )
re
h , INPUT IMPEDANCE (k OHMS)
ie
0.1 0.2 1.0 2.0
5.0 10
0.3 0.5 3.0
0.1 0.2 1.0 2.0
5.0 10
0.3 0.5 3.0
2
1
0.1 0.2 1.0 2.0
5.0 10
0.3 0.5 3.0
fe
m
-4
NST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G, SNST3904DXV6T5G
www.onsemi.com
6
TYPICAL STATIC CHARACTERISTICS
Figure 13. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h , DC CURRENT GAIN (NORMALIZED)
0.5 2.0 3.0 10 50
70
0.2 0.3
0.1
100
1.00.7
200
30205.0 7.0
FE
V
CE
= 1.0 V
T
J
= +125°C
+25°C
-55°C
Figure 14. Collector Saturation Region
I
B
, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 100.2 0.3
0
1.00.7 5.0 7.0
CE
I
C
= 1.0 mA
T
J
= 25°C
0.070.050.030.020.01
10 mA 30 mA 100 mA

NSVT3904DXV6T1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SS GP XSTR NPN 40V
Lifecycle:
New from this manufacturer.
Delivery:
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