CY7C1049B-15VC

512K x 8 Static RAM
CY7C1049B
Cypress Semiconductor Corporation 3901 North First Street San Jose CA 95134 408-943-2600
Document #: 38-05169 Rev. *A Revised September 13, 2002
049B
Features
High speed
—t
AA
= 12 ns
Low active power
1320 mW (max.)
Low CMOS standby power (Commercial L version)
2.75 mW (max.)
2.0V Data Retention (400 µW at 2.0V retention)
Automatic power-down when deselected
TTL-compatible inputs and outputs
Easy memory expansion with CE
and OE features
Functional Description
[1]
The CY7C1049B is a high-performance CMOS static RAM or-
ganized as 524,288 words by 8 bits. Easy memory expansion
is provided by an active LOW Chip Enable (CE
), an active
LOW Output Enable (OE
), and three-state drivers. Writing to
the device is accomplished by taking Chip Enable (CE
) and
Write Enable (WE
) inputs LOW. Data on the eight I/O pins (I/O
0
through I/O
7
) is then written into the location specified on the
address pins (A
0
through A
18
).
Reading from the device is accomplished by taking Chip En-
able (CE
) and Output Enable (OE) LOW while forcing Write
Enable (WE
) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.
The eight input/output pins (I/O
0
through I/O
7
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE
LOW, and WE LOW).
The CY7C1049B is available in a standard 400-mil-wide
36-pin SOJ package with center power and ground (revolu-
tionary) pinout.
Note:
1. For guidelines on SRAM system design, please refer to the System Design Guidelines Cypress application note, available on the internet at www.cypress.com.
14
15
Logic Block Diagram Pin Configuration
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
COLUMN
DECODER
ROW DECODER
SENSE AMPS
INPUT BUFFER
POWER
DOWN
WE
OE
I/O
0
I/O
1
I/O
2
I/O
3
512K x 8
ARRAY
I/O
7
I/O
6
I/O
5
I/O
4
A
0
A
11
A
13
A
12
A
CE
A
A
16
A
17
1
2
3
4
5
6
7
8
9
10
11
14
23
24
28
27
26
25
29
32
31
30
Top View
SOJ
12
13
33
36
35
34
16
15
21
22
GND
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
WE
V
CC
A
18
A
15
A
12
A
14
I/O
5
I/O
4
A
9
A
0
I/O
0
I/O
1
I/O
2
OE
A
17
A
16
A
13
CE
A
9
A
18
18
17
19
20
GND
I/O
7
I/O3
I/O
6
V
CC
A
10
A
11
NC
NC
A
10
Selection Guide
7C1049B-12 7C1049B-15 7C1049B-17 7C1049B-20 7C1049B-25
Maximum Access Time (ns) 12 15 17 20 25
Maximum Operating Current (mA) 240 220 195 185 180
Maximum CMOS Standby
Current (mA)
Coml888 8 8
Coml/Indl L- - 0.5 0.5 0.5
Indl--- 9 9
CY7C1049B
Document #: 38-05169 Rev. *A Page 2 of 10
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................65°C to +150°C
Ambient Temperature with
Power Applied.............................................55°C to +125°C
Supply Voltage on V
CC
to Relative GND
[2]
.... 0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State
[2]
....................................0.5V to V
CC
+ 0.5V
DC Input Voltage
[2]
.................................0.5V to V
CC
+ 0.5V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.....................................................>200 mA
Operating Range
Range
Ambient
Temperature V
CC
Commercial 0°C to +70°C 4.5V5.5V
Industrial 40°C to +85°C
Electrical Characteristics Over the Operating Range
Parameter Description Test Conditions 7C1049B-12 7C1049B-15 7C1049B-17
Min. Max. Min. Max. Min. Max. Unit
V
OH
Output HIGH Voltage V
CC
= Min., I
OH
= 4.0 mA 2.4 2.4 2.4 V
V
OL
Output LOW Voltage V
CC
= Min., I
OL
= 8.0 mA 0.4 0.4 0.4 V
V
IH
Input HIGH Voltage 2.2 V
CC
+ 0.3
2.2 V
CC
+ 0.3
2.2 V
CC
+ 0.3
V
V
IL
Input LOW Voltage
[2]
0.3 0.8 0.3 0.8 0.3 0.3 V
I
IX
Input Load Current GND < V
I
< V
CC
1+11+11+1µA
I
OZ
Output Leakage
Current
GND < V
OUT
< V
CC
,
Output Disabled
1+11+11+1µA
I
CC
V
CC
Operating
Supply Current
V
CC
= Max.
,
f = f
MAX
= 1/t
RC
240 220 195 mA
I
SB1
Automatic CE
Power-Down Current
TTL Inputs
Max. V
CC
, CE > V
IH
V
IN
> V
IH
or
V
IN
< V
IL
, f = f
MAX
40 40 40 mA
I
SB2
Automatic CE
Power-Down Current
CMOS Inputs
Max. V
CC
,
CE
> V
CC
0.3V,
V
IN
> V
CC
0.3V,
or V
IN
< 0.3V, f = 0
Coml 888mA
ComlL - - 0.5 mA
Indl--8mA
IndlL - - 0.5mA
Note:
2. Minimum voltage is2.0V for pulse durations of less than 20 ns.
CY7C1049B
Document #: 38-05169 Rev. *A Page 3 of 10
Electrical Characteristics Over the Operating Range (continued)
Test Conditions 7C1049B-20 7C1049B-25
Parameter Description Min. Max. Min. Max. Unit
V
OH
Output HIGH Voltage V
CC
= Min., I
OH
= 4.0 mA 2.4 2.4 V
V
OL
Output LOW Voltage V
CC
= Min., I
OL
= 8.0 mA 0.4 0.4 V
V
IH
Input HIGH Voltage 2.2 V
CC
+ 0.3 2.2 V
CC
+ 0.3 V
V
IL
Input LOW Voltage
[2]
0.3 0.8 0.3 0.8 V
I
IX
Input Load Current GND < V
I
< V
CC
1+11+1µA
I
OZ
Output Leakage
Current
GND < V
OUT
< V
CC
,
Output Disabled
1+11+1µA
I
CC
V
CC
Operating
Supply Current
V
CC
= Max.
,
f = f
MAX
= 1/t
RC
185 180 mA
I
SB1
Automatic CE
Power-Down Current
TTL Inputs
Max. V
CC
, CE > V
IH
V
IN
> V
IH
or
V
IN
< V
IL
, f = f
MAX
40 40 mA
I
SB2
Automatic CE
Power-Down Current
CMOS Inputs
Max. V
CC
,
CE
> V
CC
0.3V,
V
IN
> V
CC
0.3V,
or V
IN
< 0.3V, f = 0
Coml88mA
ComlL 0.5 0.5 mA
Indl88mA
IndlL 0.5 0.5 mA
Capacitance
[3]
Parameter Description Test Conditions Max. Unit
C
IN
Input Capacitance T
A
= 25°C, f = 1 MHz,
V
CC
= 5.0V
8pF
C
OUT
I/O Capacitance 8 pF
Note:
3. Tested initially and after any design or process changes that may affect these parameters.
AC Test Loads and Waveforms
90%
10%
3.0V
GND
90%
10%
ALL INPUT PULSES
5V
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
5V
OUTPUT
5 pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
3 ns 3 ns
OUTPUT
R1 481 R1 481
R2
255
R2
255
167
Equivalent to: VENIN EQUIVALENT
1.73V
THÉ

CY7C1049B-15VC

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
IC SRAM 4M PARALLEL 36SOJ
Lifecycle:
New from this manufacturer.
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