NCS2530, NCS2530A
http://onsemi.com
3
ATTRIBUTES
Characteristics Value
ESD
Human Body Model
Machine Model
Charged Device Model
2.0 kV (Note 1)
200 V
1.0 kV
Moisture Sensitivity (Note 2) Level 1
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
1. 0.8 kV between the input pairs +IN and −IN pins only. All other pins are 2.0 kV.
2. For additional information, see Application Note AND8003/D.
MAXIMUM RATINGS
Parameter Symbol Rating Unit
Power Supply Voltage V
S
11 V
DC
Input Voltage Range V
I
vV
S
V
DC
Input Differential Voltage Range V
ID
vV
S
V
DC
Output Current I
O
100 mA
Maximum Junction Temperature (Note 3) T
J
150 °C
Operating Ambient Temperature T
A
−40 to +85 °C
Storage Temperature Range T
stg
−60 to +150 °C
Power Dissipation P
D
(See Graph) mW
Thermal Resistance, Junction−to−Air TSSOP−16
SOIC−14
R
q
JA
178
156
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
3. Power dissipation must be considered to ensure maximum junction temperature (T
J
) is not exceeded.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated is
limited by the associated rise in junction temperature. For
the plastic packages, the maximum safe junction
temperature is 150°C. If the maximum is exceeded
momentarily, proper circuit operation will be restored as
soon as the die temperature is reduced. Leaving the device
in the “overheated’’ condition for an extended period can
result in device damage.
Figure 3. Power Dissipation vs. Temperature
1400
1000
800
600
400
0
−50 25 100 150
MAXIMUM POWER DISSIPATION (mW)
T
A
, AMBIENT TEMPERATURE (°C)
1200
200
−25 0 75 12550
SOIC−14
TSSOP−16
