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BPW46

P1-P3P4-P5
BPW46
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 03-Jun-14
1
Document Number: 81524
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
BPW46 is a PIN photodiode with high speed and high
radiant sensitivity in a clear, side view plastic package. It is
sensitive to visible and near infrared radiation.
FEATURES
• Package type: leaded
• Package form: side view
• Dimensions (L x W x H in mm): 5 x 3 x 6.4
• Radiant sensitive area (in mm
2
): 7.5
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: = ± 65°
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• High speed photo detector
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
94 8632
PRODUCT SUMMARY
COMPONENT I
ra
(μA) (deg)
0.1
(nm)
BPW46 50 ± 65 430 to 1100
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BPW46 Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
60 V
Power dissipation T
amb
25 °C P
V
215 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
-40 to +100 °C
Storage temperature range T
stg
-40 to +100 °C
Soldering temperature t 5 s T
sd
260 °C
Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm
2
R
thJA
350 K/W
BPW46
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 03-Jun-14
2
Document Number: 81524
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Breakdown voltage I
R
= 100 μA, E = 0 V
(BR)
60 V
Reverse dark current V
R
= 10 V, E = 0 I
ro
230nA
Diode capacitance
V
R
= 0 V, f = 1 MHz, E = 0 C
D
70 pF
V
R
= 3 V, f = 1 MHz, E = 0 C
D
25 40 pF
Open circuit voltage E
e
= 1 mW/cm
2
, = 950 nm V
o
350 mV
Temperature coefficient of V
o
E
e
= 1 mW/cm
2
, = 950 nm TK
Vo
-2.6 mV/K
Short circuit current
E
A
= 1 klx I
k
70 μA
E
e
= 1 mW/cm
2
, = 950 nm I
k
47 μA
Temperature coefficient of I
k
E
e
= 1 mW/cm
2
, = 950 nm TK
Ik
0.1 %/K
Reverse light current
E
A
= 1 klx, V
R
= 5 V I
ra
75 μA
E
e
= 1 mW/cm
2
, = 950 nm,
V
R
= 5 V
I
ra
40 50 μA
Angle of half sensitivity ± 65 deg
Wavelength of peak sensitivity
p
900 nm
Range of spectral bandwidth
0.1
430 to 1100 nm
Noise equivalent power V
R
= 10 V, = 950 nm NEP 4 x 10
-14
W/Hz
Rise time V
R
= 10 V, R
L
= 1 k, = 820 nm t
r
100 ns
Fall time V
R
= 10 V, R
L
= 1 k, = 820 nm t
f
100 ns
20 40 60 80
1
10
100
1000
100
94 8403
V
R
= 10 V
T
amb
- Ambient Temperature (°C)
I
ro
- Reverse Dark Current (nA)
0.6
0.8
1.0
1.2
1.4
I
ra, rel
- Relative Reverse Light Current
T
amb
- Ambient Temperature (°C)
94 8416
V
R
= 5 V
λ = 950 nm
0
10080
60
4020
BPW46
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 03-Jun-14
3
Document Number: 81524
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Reverse Light Current vs. Illuminance
Fig. 5 - Reverse Light Current vs. Reverse Voltage
Fig. 6 - Diode Capacitance vs. Reverse Voltage
Fig. 7 - Relative Spectral Sensitivity vs. Wavelength
Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement
0.01 0.1 1
0.1
1
10
100
1000
10
94 8417
V
R
= 5 V
λ = 950 nm
E
e
- Irradiance (mW/cm
2
)
I
ra
- Reverse Light Current (µA)
0.1
1
10
100
1000
94 8418
10
1
10
2
10
3
10
4
V
R
=5V
E
A
- Illuminance (lx)
I - Reverse Light Current (µA)
ra
0.1 1 10
1
10
100
100
94 8419
1 mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
λ = 950 nm
V
R
- Reverse Voltage (V)
I
ra
- Reverse Light Current (µA)
0
20
40
60
80
948407
E = 0
f = 1 MHz
C
D
- Diode Capacitance (pF)
V
R
- Reverse Voltage (V)
0.1
100
110
350 550 750 950
0
0.2
0.4
0.6
0.8
1.0
1150
94 8420
λ - Wavelength (nm)
S(λ)
rel
- Relative Spectral Sensitivit
y
0.4 0.2 0
S
rel
- Relative Radiant Sensitivity
94 8406
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
P1-P3P4-P5

BPW46

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Optical Sensors Photodiodes 65 Degree 215mW
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