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PH4030AL,115

P1-P3P4-P6P7-P9P10-P10
TK62N60W
1
MOSFETs Silicon N-Channel MOS (DTMOS)
TK62N60W
TK62N60W
TK62N60W
TK62N60W
Start of commercial production
2012-09
1.
1.
1.
1. Applications
Applications
Applications
Applications
• Switching Voltage Regulators
2.
2.
2.
2. Features
Features
Features
Features
(1) Low drain-source on-resistance: R
DS(ON)
= 0.033 Ω (typ.)
by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: V
th
= 2.7 to 3.7 V (V
DS
= 10 V, I
D
= 3.1 mA)
3.
3.
3.
3. Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
TO-247
1: Gate
2: Drain (Heatsink)
3: Source
4.
4.
4.
4. Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
Mounting torque
(T
c
= 25)
(Note 1)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
I
DR
I
DRP
T
ch
T
stg
TOR
Rating
600
±30
61.8
247
400
698
15.5
61.8
247
150
-55 to 150
0.8
Unit
V
A
W
mJ
A
Nm
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
2014-01-05
Rev.4.0
TK62N60W
2
5.
5.
5.
5. Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Max
0.313
50
Unit
/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: V
DD
= 90 V, T
ch
= 25 (initial), L = 5.08 mH, R
G
= 25 Ω, I
AR
= 15.5 A
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2014-01-05
Rev.4.0
TK62N60W
3
6.
6.
6.
6. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
6.1.
6.1.
6.1.
6.1. Static Characteristics (T
Static Characteristics (T
Static Characteristics (T
Static Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
I
GSS
I
DSS
V
(BR)DSS
V
th
R
DS(ON)
Test Condition
V
GS
= ±30 V, V
DS
= 0 V
V
DS
= 600 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
V
DS
= 10 V, I
D
= 3.1 mA
V
GS
= 10 V, I
D
= 30.9 A
Min
600
2.7
Typ.
0.033
Max
±1
10
3.7
0.040
Unit
µA
V
Ω
6.2.
6.2.
6.2.
6.2. Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Effective output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
MOSFET dv/dt ruggedness
Symbol
C
iss
C
rss
C
oss
C
o(er)
r
g
t
r
t
on
t
f
t
off
dv/dt
Test Condition
V
DS
= 300 V, V
GS
= 0 V, f = 100 kHz
V
DS
= 0 to 400 V, V
GS
= 0 V
V
DS
= OPEN, f = 1 MHz
See Figure 6.2.1
V
DD
= 0 to 400 V, I
D
= 15.5 A
Min
50
Typ.
6500
20
140
200
2
58
115
15
310
Max
Unit
pF
Ω
ns
V/ns
Fig.
Fig.
Fig.
Fig. 6.2.1
6.2.1
6.2.1
6.2.1 Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
6.3.
6.3.
6.3.
6.3. Gate Charge Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Q
g
Q
gs1
Q
gd
Test Condition
V
DD
≈ 400 V, V
GS
= 10 V, I
D
= 61.8 A
Min
Typ.
180
38
85
Max
Unit
nC
6.4.
6.4.
6.4.
6.4. Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Diode dv/dt ruggedness
Symbol
V
DSF
t
rr
Q
rr
I
rr
dv/dt
Test Condition
I
DR
= 61.8 A, V
GS
= 0 V
I
DR
= 30.9 A, V
GS
= 0 V
-dI
DR
/dt = 50 A/µs
I
DR
= 30.9 A, V
GS
= 0 V, V
DD
= 400 V
Min
15
Typ.
500
7
25
Max
-1.7
Unit
V
ns
µC
A
V/ns
2014-01-05
Rev.4.0
P1-P3P4-P6P7-P9P10-P10

PH4030AL,115

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Manufacturer:
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Description:
MOSFET N-CH 30V 100A LFPAK
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