1/9June 2004
STS2DPF80
DUAL P-CHANNEL 80V - 0.21 Ω - 2.3A SO-8
STripFET™ POWER MOSFET
Rev.0.1
■ TYPICAL R
DS
(on) = 0.21 Ω
■ STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This application specific Power MOSFET is the
second generation of STMicroelectronis unique
"Single Feature Size™" strip-based process. The
resulting transistor shows extremely high packing
density for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing reproduc-
ibility
.
APPLICATIONS
■ DC/DC CONVERTERS
■ BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
■ POWER MANAGEMENT IN CELLULAR
PHONES AND DISPLAY NEW GENERATION
Ordering Information
TYPE
V
DSS
R
DS(on)
I
D
STS2DPF80 80 V <0.25 Ω 2.3 A
SALES TYPE MARKING PACKAGE PACKAGING
STS8DPF80 S8DPF80 SO-8 TAPE & REEL
SO-8
ABSOLUTE MAXIMUM RATINGS
(•) Pulse width limited by safe operating area. Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
= 0)
80 V
V
DGR
Drain-gate Voltage (R
GS
= 20 kΩ)
80 V
V
GS
Gate- source Voltage ± 20 V
I
D
Drain Current (continuous) at T
C
= 25°C Single Operation
Drain Current (continuous) at T
C
= 100°C Single Operation
2.0
1.3
A
A
I
DM
(•)
Drain Current (pulsed) 8 A
P
tot
Total Dissipation at T
C
= 25°C
2.5 W
T
stg
Storage Temperature -55 to 150 °C
T
j
Max. Operating Junction Temperature 150 °C
INTERNAL SCHEMATIC DIAGRAM
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
