ESD5B5.0ST5G Datasheet ESD5B5.0ST5G, ESD5B5.0ST1G, SZESD5B5.0ST1G | P1-P3

November, 2015 − Rev. 5

1 Publication Order Number:

ESD5B5.0ST1/D

ESD5B5.0S, SZESD5B5.0S

Transient Voltage Suppressor

Micro−Packaged Diode for ESD Protection

The ESD5B Series is designed to protect voltage sensitive

components from ESD. Excellent clamping capability, low leakage,

and fast response time provide best in class protection on designs that

are exposed to ESD. Because of its small size and bi−directional

design, it is ideal for use in cellular phones, MP3 players, and portable

applications that require audio line protection.

Specification Features

• Low Capacitance 32 pF

• Low Clamping Voltage

• Small Body Outline Dimensions: nom 0.063″ x 0.032″ (1.6x0.8 mm)

• Low Body Height: nom 0.024″ (0.6 mm)

• Reverse Working (Stand−off) Voltage: 5.0 V

• Peak Power up to 50 W @ 8 x 20 ms Pulse

• Low Leakage

• Response Time is Typically < 1 ns

• ESD Rating of Class 3 (> 16 kV) per Human Body Model

• IEC61000−4−2 Level 4 ESD Protection

• SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

• This is a Pb−Free Device

Mechanical Characteristics

CASE:

Void-free, transfer-molded, thermosetting plastic

Epoxy Meets UL 94 V−0

LEAD FINISH: 100% Matte Sn (Tin)

MOUNTING POSITION: Any

QUALIFIED MAX REFLOW TEMPERATURE: 260°C

Device Meets MSL 1 Requirements

MAXIMUM RATINGS

Rating Symbol Value Unit

IEC 61000−4−2 (ESD) Contact

Air

±30

ESD Voltage Per Human Body Model

Per Machine Model

400

Peak Power (Figure 1) Per 8 x 20 ms Waveform

Peak Power (Figure 2)Per 10 x 1000 ms Waveform

Total Power Dissipation on FR−5 Board (Note 1)

@ T

= 25°C

°P

° 200 mW

Junction and Storage Temperature Range T

, T

stg

−55 to

+150

°C

Lead Solder Temperature − Maximum

(10 Second Duration)

260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0 x 0.75 x 0.62 in.

See Application Note AND8308/D for further description of survivability specs.

Device Package Shipping

†

ORDERING INFORMATION

SOD−523

CASE 502

MARKING DIAGRAM

www.

onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

www.onsemi.com

B5 = Specific Device Code

M Date Code

G = Pb−Free Package

(Note: Microdot may be in either location)

ESD5B5.0ST1G SOD−523

(Pb−Free)

3000 / Tape &

Reel

*Date Code orientation and/or position may

vary depending upon manufacturing location.

ESD5B5.0ST5G SOD−523

(Pb−Free)

8000 / Tape &

Reel

SZESD5B5.0ST1G SOD−523

(Pb−Free)

3000 / Tape &

Reel

Bi−Directional TVS

RWM

ESD5B5.0S, SZESD5B5.0S

www.onsemi.com

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise noted)

Symbol

Parameter

Reverse Peak Pulse Current

Clamping Voltage @ I

RWM

Working Peak Reverse Voltage

Reverse Leakage Current @ V

RWM

Breakdown Voltage @ I

Test Current

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted, V

= 0.9 V Max. @ I

= 10 mA for all types)

Device*

RWM

(V)

(mA)

@ V

RWM

(V) @ I

(Note 2)

C (pF) @ V

= 0 V,

f = 1 MHz

Max Max Min Max mA Typ Per IEC61000−4−2 (Note 3)

ESD5B5.0ST1G/T5G,

SZESD5B5.0ST1G

5.0 1.0 5.8 7.8 1.0 32 Figures 1 and 2

See Below

*Other voltages available upon request.

2. V

is measured with a pulse test current I

at an ambient temperature of 25°C.

3. For test procedure see Figures 3 and 4 and Application Note AND8307/D.

Figure 1. ESD Clamping Voltage Screenshot

Positive 8 kV Contact per IEC 61000−4−2

Figure 2. ESD Clamping Voltage Screenshot

Negative 8 kV Contact per IEC 61000−4−2

ESD5B5.0S, SZESD5B5.0S

www.onsemi.com

IEC 61000−4−2 Spec.

Level

Test Volt-

age (kV)

First Peak

Current

(A)

Current at

30 ns (A)

Current at

60 ns (A)

1 2 7.5 4 2

2 4 15 8 4

3 6 22.5 12 6

4 8 30 16 8

peak

90%

10%

IEC61000−4−2 Waveform

100%

I @ 30 ns

I @ 60 ns

= 0.7 ns to 1 ns

Figure 3. IEC61000−4−2 Spec

Figure 4. Diagram of ESD Test Setup

50 W

Cable

TVS

Oscilloscope

ESD Gun

The following is taken from Application Note

AND8308/D − Interpretation of Datasheet Parameters

for ESD Devices.

ESD Voltage Clamping

For sensitive circuit elements it is important to limit the

voltage that an IC will be exposed to during an ESD event

to as low a voltage as possible. The ESD clamping voltage

is the voltage drop across the ESD protection diode during

an ESD event per the IEC61000−4−2 waveform. Since the

IEC61000−4−2 was written as a pass/fail spec for larger

systems such as cell phones or laptop computers it is not

clearly defined in the spec how to specify a clamping voltage

at the device level. ON Semiconductor has developed a way

to examine the entire voltage waveform across the ESD

protection diode over the time domain of an ESD pulse in the

form of an oscilloscope screenshot, which can be found on

the datasheets for all ESD protection diodes. For more

information on how ON Semiconductor creates these

screenshots and how to interpret them please refer to

AND8307/D.

P1-P3 P4-P4

ESD5B5.0ST5G

Mfr. #:

Buy ESD5B5.0ST5G

Manufacturer:

ON Semiconductor

Description:

TVS Diodes / ESD Suppressors SOD-523 EUT SNGL CU

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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ESD5B5.0ST5G

ESD5B5.0ST5G

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