RN1107~1109
2014-03-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1107, RN1108, RN1109
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
z With built-in bias resistors.
z Simplified circuit design
z Reduced number of parts and simplified manufacturing process
z Complementary to RN2107 to 2109
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings
(Ta = 25
°
C)
Characteristic Symbol Rating Unit
Collector-base voltage RN1107 to 1109 V
CBO
50 V
Collector-emitter voltage RN1107 to 1109 V
CEO
50 V
RN1107 6
RN1108 7
Emitter-base voltage
RN1109
V
EBO
15
V
Collector current RN1107 to 1109 I
C
100 mA
Collector power dissipation RN1107 to 1109 P
C
100 mW
Junction temperature RN1107 to 1109 T
j
150 °C
Storage temperature range RN1107 to 1109 T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
JEDEC ―
JEITA ―
TOSHIBA 2-2H1A
Weight: 2.4mg (typ.)
Unit: mm
Type No. R1 (kΩ)R2 (kΩ)
RN1107 10
47
RN1108 22
47
RN1109 47
22
Start of commercial production
1990-12
