STAC4932F Datasheet STAC4932F | P1-P3

Preliminary data

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

September 2010 Doc ID 17158 Rev 3 1/12

STAC4932F

RF power transistors

HF/VHF/UHF N-channel MOSFETs

Features

■ Excellent thermal stability

■ Common source push-pull configuration

■ P

OUT

= 1000 W min. (1200 W typ.) with 26 dB

gain @ 123 MHz

■ Pulse conditions: 1 msec - 10%

■ In compliance with the 2002/95/EC

European directive

■ ST air cavity packaging technology - STAC

package

Description

The STAC4932F is a N-channel MOS field-effect

RF power transistor. It is intended for 100 V pulse

applications up to 250 MHz. This device is

suitable for use in industrial, scientific and medical

applications.

The STAC4932B benefits from the latest

generation of efficient, patent-pending package

technology, otherwise known as STAC

Figure 1. Pin connection

STAC244F

Air cavity

1. Drain

2. Gate

3. Source

(Bottom side)

Table 1. Device summary

Order code Marking Package Packaging

STAC4932F STAC4932F STAC244F Plastic tray

www.st.com

Contents STAC4932F

2/12 Doc ID 17158 Rev 3

Contents

1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

4 Typical performances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

STAC4932F Electrical data

Doc ID 17158 Rev 3 3/12

1 Electrical data

1.1 Maximum ratings

1.2 Thermal data

Table 2. Absolute maximum ratings (T

CASE

= 25°C)

Symbol Parameter Value Unit

(BR)DSS

(1)

1. T

= 150 °C

Drain source voltage 200 V

DGR

Drain-gate voltage (R

= 1 MΩ)200V

Gate-source voltage ±20 V

Max. operating junction temperature 200 °C

STG

Storage temperature -65 to +150 °C

Table 3. Thermal data (1 msec - 10%)

Symbol Parameter Value Unit

thJC

Junction - case thermal resistance 0.075 °C/W

P1-P3 P4-P6 P7-P9 P10-P12

STAC4932F

Mfr. #:

Buy STAC4932F

Manufacturer:

STMicroelectronics

Description:

RF MOSFET Transistors 300W 50V RF MOS 26dB 123MHz N-Ch

Lifecycle:

New from this manufacturer.

Delivery:

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STAC4932F