DMN2230U-7 Datasheet DMN2230U-7 | P1-P3

DMN2230U

Document number: DS31180 Rev. 5 - 2

1 of 5

www.diodes.com

January 2012

DMN2230U

NEW PRODUCT

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• 110 mΩ @ V

GS

= 4.5V

• 145 mΩ @ V

GS

= 2.5V

• 230 mΩ @ V

GS

= 1.8V

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Lead, Halogen and Antimony Free, RoHS Compliant

"Green" Device (Notes 1, 2 and 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

• Weight: 0.008 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMN2230U-7 SOT23 3000/Tape & Reel

Notes: 1. No purposefully added lead. Halogen and Antimony Free.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Product manufactured with Green Molding Compound and does not contain Halogens or Sb

2

O

3

Fire Retardants.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SOT23

Top View

Internal Schematic

D

GS

22N = Marking Code

YM = Date Code Marking

Y = Year (ex: U = 2007)

M = Month (ex: 9 = September)

22N

YM

DMN2230U

Document number: DS31180 Rev. 5 - 2

2 of 5

www.diodes.com

January 2012

DMN2230U

NEW PRODUCT

Maximum Ratings @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage

V

DSS

20 V

Gate-Source Voltage

V

GSS

±12 V

Drain Current (Note 5)

I

D

2.0 A

Pulsed Drain Current (Note 6)

I

DM

7 A

Thermal Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

P

D

600 mW

Thermal Resistance, Junction to Ambient

R

θ

JA

208 °C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150 °C

Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BV

DSS

20

⎯ ⎯

V

GS

= 0V, I

D

= 10μA

Zero Gate Voltage Drain Current

I

DSS

⎯ ⎯

1

μA

V

DS

= 20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

⎯ ⎯

±10 μA

V

GS

= ±12V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

V

GS

(

th

)

0.5

⎯

1.0 V

V

DS

= V

CS

, I

D

= 250μA

Static Drain-Source On-Resistance

R

DS (ON)

⎯

81

113

170

110

145

230

mΩ

V

GS

= 4.5V, I

D

= 2.5A

V

GS

= 2.5V, I

D

= 1.5A

V

GS

= 1.8V, I

D

= 1.0A

Forward Transfer Admittance

|Y

fs

|

⎯

5

⎯

S

V

DS

= 5V, I

D

= 2.4A

Diode Forward Voltage (Note 7)

V

SD

⎯

0.8 1.1 V

V

GS

= 0V, I

S

= 1.05A

DYNAMIC CHARACTERISTICS

Input Capacitance

C

iss

⎯

188

⎯

pF

V

DS

= 10V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

⎯

44

⎯

pF

Reverse Transfer Capacitance

C

rss

⎯

30

⎯

pF

Total Gate Charge

Q

g

⎯

2.3

⎯

nC

V

DS

= 10V, I

D

= 11.6A

Gate-Source Charge

Q

g

s

⎯

0.3

⎯

nC

Gate-Drain Charge

Q

g

d

⎯

0.5

⎯

nC

Turn-On Delay Time

t

d

(

on

)

⎯

8

⎯

ns

V

DD

= 10V, R

L

= 10Ω

I

D

= 1A, V

GEN

= 4.5V, R

G

= 6Ω

Rise Time

t

r

⎯

3.8

⎯

Turn-Off Delay Time

t

d

(

off

)

⎯

19.6

⎯

Fall Time

t

f

⎯

8.3

⎯

Notes: 5. Device mounted on FR-4 PCB, or minimum recommended pad layout

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

DMN2230U

Document number: DS31180 Rev. 5 - 2

3 of 5

www.diodes.com

January 2012

DMN2230U

NEW PRODUCT

0

2

4

6

8

10

0

1

2

3

4

5

6

7

8

0 0.5 1 1.5 2 2.5 3 3.5 4

Fig. 3 On-Resistance vs.

Drain-Source Current & Gate Voltage

I , DRAIN-SOURCE CURRENT

D

R , STATIC DRAIN-SOURCE

ON-RESISTANCE ( )

DS(ON)

Ω

V = 1.8V

GS

V = 2.5V

GS

V = 4.5V

GS

0.01

0.1

1

0.01 0.1 1 10

Fig. 4 Normalized Static Drain-Source On-Resistance

vs. Ambient Temperature

0.6

0.8

1

1.2

1.4

1.6

1.

8

-50 -25 25 50 150

T , AMBIENT TEMPERATURE (°C)

A

R NORMALIZED

DS(ON)

V = 2.5V

I = 1.5A

GS

D

V = 4.5V

I = 2.5A

GS

D

V = 1.8V

I = 1.0A

GS

D

075125100

Fig. 5 Gate Threshold Variation with Temperature

0

0.2

0.4

0.6

0.8

1

-50-25 0 25 50 75100125150

T , AMBIENT TEMPERATURE (C)

A

V , GATE THRESHOLD VOLTAGE (V)

GS(TH)

I = 250µA

D

Fig. 6 Typical Total Capacitance

10

100

1,000

0 2 4 6 8 10 12 14 16 18 20

V , DRAIN-SOURCE VOLTAGE (V)

DS

C

,

T

O

T

AL

C

A

P

A

C

I

T

AN

C

E (p

F

)

C

iss

C

oss

C

rss

f = 1MHz

DMN2230U-7

DMN2230U-7

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