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NUP4304MR6T1G

P1-P3P4-P6
Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 4
1 Publication Order Number:
NUP4304MR6/D
NUP4304MR6,
SZNUP4304MR6
Low Capacitance Diode
Array for ESD Protection in
Four Data Lines
NUP4304MR6 is a micro−integrated device designed to provide
protection for sensitive components from possible harmful electrical
transients; for example, ESD (electrostatic discharge).
Features
Low Capacitance (1.5 pF Maximum Between I/O Lines)
Single Package Integration Design
Provides ESD Protection for JEDEC Standards JESD22
Machine Model = Class C
Human Body Model = Class 3B
Protection for IEC61000−4−2 (Level 4)
8.0 kV (Contact)
15 kV (Air)
Ensures Data Line Speed and Integrity
Fewer Components and Less Board Space
Direct the Transient to Either Positive Side or to the Ground
Applications
USB 1.1 and 2.0 Data Line Protection
T1/E1 Secondary IC Protection
T3/E3 Secondary IC Protection
HDSL, IDSL Secondary IC Protection
Video Line Protection
Microcontroller Input Protection
Base Stations
I
2
C Bus Protection
AEC−Q101 Qualified and PPAP Capable
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
This is a Pb−Free Device*
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping†
ORDERING INFORMATION
MARKING DIAGRAM
TSOP−6
CASE 318F
http://onsemi.com
LG MG
G
6 I/O
5 V
N
4 I/O
I/O 1
V
P
2
1/O 3
PIN CONFIGURATION
AND SCHEMATIC
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NUP4304MR6T1G TSOP−6
(Pb−Free)
3,000 /
Tape & Reel
LG = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
SZNUP4304MR6T1G TSOP−6
(Pb−Free)
3,000 /
Tape & Reel
NUP4304MR6, SZNUP4304MR6
http://onsemi.com
2
MAXIMUM RATINGS (Each Diode) (T
J
= 25C unless otherwise noted)
Rating
Symbol Value Unit
Reverse Voltage V
R
70 Vdc
Forward Current I
F
200 mAdc
Peak Forward Surge Current I
FM(surge)
500 mAdc
Repetitive Peak Reverse Voltage V
RRM
70 V
Average Rectified Forward Current (Note 1) (averaged over any 20 ms period) I
F(AV)
715 mA
Repetitive Peak Forward Current I
FRM
450 mA
Non−Repetitive Peak Forward Current
t = 1.0 ms
t = 1.0 ms
t = 1.0 S
I
FSM
2.0
1.0
0.5
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance Junction−to−Ambient
R
q
JA
556 C/W
Lead Solder Temperature
Maximum 10 Seconds Duration
T
L
260
C
Junction Temperature T
J
−40 to +150 C
Storage Temperature T
stg
−55 to +150 C
ELECTRICAL CHARACTERISTICS (T
J
= 25C unless otherwise noted) (Each Diode)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
(BR)
= 100 mA)
V
(BR)
70 − −
Vdc
Reverse Voltage Leakage Current
(V
R
= 70 Vdc)
(V
R
= 25 Vdc, T
J
= 150C)
(V
R
= 70 Vdc, T
J
= 150C)
I
R
−
−
−
−
−
−
2.5
30
50
mAdc
Capacitance (between I/O pins)
(V
R
= 0 V, f = 1.0 MHz)
C
D
− 0.8 1.5
pF
Capacitance (between I/O pin and ground)
(V
R
= 0 V, f = 1.0 MHz)
C
D
− 1.6 3
pF
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
V
F
−
−
−
−
−
−
−
−
715
855
1000
1250
mV
dc
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
NUP4304MR6, SZNUP4304MR6
http://onsemi.com
3
100
0.2 0.4
V
F
, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0
1.2
10
1.0
0.1
T
A
= 85C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40
50
1.75
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.5
1.25
1.0
0.75
C
D
, DIODE CAPACITANCE (pF)
2468
I
F
, FORWARD CURRENT (mA)
Figure 1. Forward Voltage
Figure 2. Leakage Current
Figure 3. Capacitance
T
A
= -40C
T
A
= 25C
T
A
= 150C
T
A
= 125C
T
A
= 85C
T
A
= 55C
T
A
= 25C
I
R
, REVERSE CURRENT (A)
Curves Applicable to Each Cathode
P1-P3P4-P6

NUP4304MR6T1G

Mfr. #:
Buy NUP4304MR6T1G
Manufacturer:
ON Semiconductor
Description:
Rectifiers Low Cap. for ESD Protection in 4 Line
Lifecycle:
New from this manufacturer.
Delivery:
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