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EGF1CHE3_A/H

P1-P3P4-P4
EGF1A, EGF1B, EGF1C, EGF1D
www.vishay.com
Vishay General Semiconductor
Revision: 11-Dec-13
1
Document Number: 88579
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Glass Passivated Ultrafast Rectifier
FEATURES
• Superectifier structure for high reliability condition
• Cavity-free glass-passivated junction
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
250 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive and telecommunication.
MECHANICAL DATA
Case: DO-214BA, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
50 V, 100 V, 150 V, 200 V
I
FSM
30 A
t
rr
50 ns
V
F
1.0 V
T
J
max. 175 °C
Package DO-214BA (GF1)
Diode variations Single die
DO-214BA (GF1)
SUPERECTIFIER
®
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL EGF1A EGF1B EGF1C EGF1D UNIT
Device marking code EA EB EC ED
Maximum repetitive peak reverse voltage V
RRM
50 100 150 200 V
Maximum RMS voltage V
RMS
35 70 105 140 V
Maximum DC blocking voltage V
DC
50 100 150 200 V
Maximum average forward rectified current at T
L
= 125 °C I
F(AV)
1.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
30 A
Operating junction and storage temperature range T
J
, T
STG
- 65 to + 175 °C
EGF1A, EGF1B, EGF1C, EGF1D
www.vishay.com
Vishay General Semiconductor
Revision: 11-Dec-13
2
Document Number: 88579
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1)
Thermal resistance from junction to ambient and from junction to lead, PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 C unless otherwise specified)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL EGF1A EGF1B EGF1C EGF1D UNIT
Maximum instantaneous forward voltage 1.0 A V
F
(1)
1.0 V
Maximum DC reverse current
at rated DC blocking voltage
T
A
= 25 °C
I
R
(1)
5.0
μA
T
A
= 125 °C 50
Typical reverse recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
50 ns
Typical junction capacitance 4.0 V, 1 MHz C
J
15 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL EGF1A EGF1B EGF1C EGF1D UNIT
Typical thermal resistance
R
JA
(1)
85
°C/W
R
JL
(1)
30
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
EGF1D-E3/67A 0.104 67A 1500 7" diameter plastic tape and reel
EGF1D-E3/5CA 0.104 5CA 6500 13" diameter plastic tape and reel
EGF1DHE3/67A
(1)
0.104 67A 1500 7" diameter plastic tape and reel
EGF1DHE3/5CA
(1)
0.104 5CA 6500 13" diameter plastic tape and reel
0
1.0
7550250 100 125 150 175
Average Forward Rectified Current (A)
Lead Temperature (°C)
0.5
Resistive or Inductive Load
P.C.B. Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
0
5
10
15
20
25
30
1 10010
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
EGF1A, EGF1B, EGF1C, EGF1D
www.vishay.com
Vishay General Semiconductor
Revision: 11-Dec-13
3
Document Number: 88579
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.40.2 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
0.01
0.1
10
1
100
Instantaneous Forward Current (A)
1.8
T
J
= 150 °C
Pulse Width = 300 µs
1 % Duty Cycle
T
J
= 25 °C
6040200 10080
0.01
0.1
10
1
100
1000
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (µA)
T
J
= 100 °C
T
J
= 150 °C
T
J
= 25 °C
Reverse Voltage (V)
Junction Capacitance (pF)
0.1 101 100
20
10
30
40
50
60
70
0
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.01 0.1 101 100
100
10
1
0.1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
0.167 (4.24)
0.187 (4.75)
0.0065 (0.17)
0.015 (0.38)
0.030 (0.76)
0.060 (1.52)
0.196 (4.98)
0.226 (5.74)
0.094 (2.39)
0.114 (2.90)
0.100 (2.54)
0.118 (3.00)
0.040 (1.02)
0.066 (1.68)
0.098 (2.49)
0.108 (2.74)
0.006 (0.152) TYP.
DO-214BA (GF1)
0.076 (1.93)
MAX.
0.220 (5.58)
REF.
0.060 (1.52)
MIN.
Mounting Pad Layout
Cathode Band
0.066 (1.68)
MIN.
P1-P3P4-P4

EGF1CHE3_A/H

Mfr. #:
Buy EGF1CHE3_A/H
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 1A,150V,50NS AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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