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BS170PSTOA

P1-P1
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – SEPT 93
FEATURES
* 60 Volt V
DS
*R
DS(on)
=5Ω
REFER TO ZVN3306A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
60 V
Continuous Drain Current at T
amb
=25°C I
D
270 mA
Pulsed Drain Current I
DM
3A
Gate-Source Voltage V
GS
±20
V
Power Dissipation at T
amb
=25°C P
tot
625 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
60 V
I
D
=100µA, V
GS
=0V
Gate-Source
Threshold Voltage
V
GS(th)
0.8 3 V I
D
=1mA, V
DS
=V
GS
Gate Body Leakage I
GSS
10 nA VGS=15V, V
DS
=0V
Zero Gate Voltage
Drain Current
I
DSS
0.5
µA
V
GS
=0V, V
DS
=25V
Static Drain-Source
on-State Resistance (1)
R
DS(on)
5
Ω
V
GS
=10V, I
D
=200mA
Forward
Transconductance (1)(2)
g
fs
200 mS V
DS
=10V, I
D
=200mA
Input Capacitance (2) C
iss
60 pF V
GS
=0V, V
DS
=10V
f=1MHz
Turn-On Time (2)(3) t
(on)
10 ns
V
DD
≈15V, I
D
=600mA
Turn-Off Time (2)(3) t
(off)
10 ns
(1) Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% (2) Sample test
(3) Switching times measured with a 50Ω source impedance and <5ns rise time on a pulse generator
BS170P
3-27
D
G
S
E-Line
TO92 Compatible
P1-P1

BS170PSTOA

Mfr. #:
Buy BS170PSTOA
Manufacturer:
Description:
MOSFET N-CH 60V 0.27A TO92-3
Lifecycle:
New from this manufacturer.
Delivery:
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