SiZ200DT
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Vishay Siliconix
S18-0464-Rev. A, 23-Apr-18
9
Document Number: 75033
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CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
10
100
1000
10000
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
2nd line
T
J
= 150 °C
T
J
= 25 °C
10
100
1000
10000
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 0 25 50 75 100 125 150
Axis Title
1st line
2nd line
V
GS(th)
(V)
T
J
- Temperature (°C)
2nd line
I
D
= 250µA
10
100
1000
10000
0
0.005
0.01
0.015
0.02
0246810
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
2nd line
T
J
= 25 °C
T
J
= 125 °C
I
D
= 10 A
10
100
1000
10000
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000
Axis Title
1st line
2nd line
2nd line
Power (W)
Time (s)
2nd line
10
100
1000
10000
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
Axis Title
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
(1)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Limited by R
DS(on)
(1)
T
A
= 25 °C
Single pulse
100 ms
10 ms
1 ms
100 µs
1 s
10 s
DC
I
DM
Limited
I
D(ON)
Limited
BV
dss
Limited
