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NE58633BS,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27
NE58633_3 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 19 January 2010 4 of 27
NXP Semiconductors
NE58633
Noise reduction class-D headphone driver amplifier
6. Limiting values
7. Recommended operating conditions
MA_OUTR 21 music amplifier output, right channel
MA_INRN 22 music amplifier negative input, right channel
MA_INRP 23 music amplifier positive input, right channel
NMIC_OUTR 24 noise reduction microphone preamplifier output, right channel
NMIC_INRN 25 noise reduction microphone preamplifier negative input, right
channel
NMIC_INRP 26 noise reduction microphone preamplifier positive input, right
channel
AGND 27 ground, analog
B_IN 28 boost converter input
BS 29 boost converter switching transistor collector
VBAT 30 battery supply voltage
NMIC_INLP 31 Noise reduction microphone preamplifier positive input, left
channel
NMIC_INLN 32 Noise reduction microphone preamplifier negative input, left
channel
Table 2. Pin description
…continued
Symbol Pin Description
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
T
amb
=25
°
C, unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
V
BAT
battery supply voltage pins VBAT, PVDDL, PVDDR
in active mode −0.3 +1.7 V
in mute mode −0.3 +1.7 V
V
I
input voltage −0.3 +2.0 V
T
amb
ambient temperature operating 0 70 °C
T
j
junction temperature operating 0 150 °C
T
stg
storage temperature 0 150 °C
V
ESD
electrostatic discharge
voltage
human body model ±2500 - V
machine model ±150 - V
Table 4. Operating conditions
Symbol Parameter Conditions Min Max Unit
V
BAT
battery supply voltage AVDD, PVDD 0.9 1.7 V
V
i(cm)
common-mode input
voltage
music and noise reduction
amplifier inputs
0.2 V
bst
− 1V
V
IH
HIGH-level input voltage unmuted; MUTE 1V
BAT
V
V
IL
LOW-level input voltage muted; MUTE 00.8V
T
amb
ambient temperature operating 0 70 °C
NE58633_3 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 19 January 2010 5 of 27
NXP Semiconductors
NE58633
Noise reduction class-D headphone driver amplifier
8. Characteristics
[1] Music amplifier at unity gain; noise preamplifier at 25 dB gain; noise preamplifier output connected to corresponding inverting input of
music amplifier; non-inverting inputs.
Table 5. Electrical characteristics
T
amb
=25
°
C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
|V
O(offset)
| output offset voltage measured differentially; inputs AC
grounded; G
v(cl)
=25dB;
V
BAT
= 0.9 V to 1.7 V
-525mV
|V
I(offset)
| input offset voltage music amplifier and noise reduction
microphone amplifier;
measured differentially
-1-mV
Z
i
input impedance music amplifier, non-inverting terminal;
V
BAT
= 0.9 V to 1.7 V
-10-kΩ
microphone preamplifier;
V
BAT
= 0.9 V to 1.7 V
inverting terminal noise reduction - 1 - kΩ
non-inverting terminal noise reduction - 5 - kΩ
I
LI
input leakage current music amplifier; inverting terminal
V
BAT
= 0.9 V to 1.7 V
-- 500nA
V
OH
HIGH-level output voltage music amplifier and noise reduction
microphone preamplifier; I
OH
=1mA;
V
BAT
= 0.9 V to 1.7 V
2.6 - - V
V
OL
LOW-level output voltage music amplifier and noise reduction
microphone preamplifier; I
OH
=1mA;
V
BAT
= 0.9 V to 1.7 V
- - 0.35 V
V
ref
reference voltage V
BAT
= 0.9 V to 1.7 V - 0.5V
bst
-V
I
DD
supply current AC grounded; no load
[1]
V
BAT
=1.7V - 5.0 6.0 mA
V
BAT
=1.5V - 6.0 - mA
V
BAT
=1.3V - 7.0 - mA
V
BAT
= 1.05 V - 8.0 - mA
V
BAT
=0.9V - 9.0 11 mA
R
DSon
drain-source on-state
resistance
V
BAT
= 0.9 V to 1.7 V; no load - 2.8 - Ω
f
sw
switching frequency V
BAT
= 0.9 V to 1.7 V 250 300 350 kHz
G
v(cl)
closed-loop voltage gain with noise reduction microphone circuit;
V
BAT
= 0.9 V to 1.7 V; R
F
=18kΩ
-25-dB
V
th(mute)
mute threshold voltage V
BAT
= 0.9 V to 1.7 V
LOW-level; active LOW (muted) 0 - 0.8 V
HIGH-level; inactive HIGH (unmuted) 1.0 - - V
NE58633_3 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 19 January 2010 6 of 27
NXP Semiconductors
NE58633
Noise reduction class-D headphone driver amplifier
Table 6. Operating characteristics
Symbol Parameter Conditions Min Typ Max Unit
ΔV
o
output voltage variation per channel; R
L
=16Ω; f = 1 kHz;
THD+N = 10 %
V
BAT
= 1.7 V - 800 - mV
rms
V
BAT
= 1.5 V - 800 - mV
rms
V
BAT
= 1.05 V - 550 - mV
rms
P
o
output power per channel; f = 1 kHz;
THD+N = 10 %
R
L
=16Ω; V
BAT
=1.5V - 40 - mW
R
L
=32Ω; V
BAT
=1.5V - 20 - mW
R
L
=16Ω; V
BAT
=1.05V - 19 - mW
THD+N total harmonic
distortion-plus-noise
V
o
=1V
peak
; f = 1 kHz;
V
BAT
= 1.5 V to 1.7 V
-1.0-%
V
o
=620mV
peak
; f = 1 kHz;
V
BAT
=1.05
-1.0-%
G
v(ol)
open-loop voltage gain music amplifier and noise reduction
microphone preamplifier;
V
BAT
=1.5V
- 100 - dB
α
ct
crosstalk attenuation f = 1 kHz; V
BAT
=1.5V; R
g
=1kΩ;
R
L
=16Ω; V
o
=800mV
rms
40 50 - dB
SVRR supply voltage ripple
rejection
V
bst(ripple)
= 100 mV
rms
;
G
v(cl)
=25dB; f=1kHz
V
BAT
=0.9V 30 40 - dB
V
BAT
=1.5V - 60 - dB
Z
i
input impedance microphone preamplifier;
G
v(cl)
= 25 dB (from noise reduction
microphone to class-D output)
-1-kΩ
S/N signal-to-noise ratio V
BAT
=1.5V; V
o
=800mV
rms
;
R
L
=16Ω; f = 1 kHz
-70-dB
V
n(i)
input noise voltage spectral noise; V
BAT
=1.5V;
f = 20 Hz to 20 kHz; G
v(cl)
=25dB;
R
g
=1kΩ
-12-nV/√Hz
V
n(o)
output noise voltage V
BAT
= 1.5 V; f = 20 Hz to 20 kHz;
inputs AC grounded; G
v(cl)
=25dB
no weighting - 26 - μV
A weighting - 20 - μV
DC-to-DC boost converter
V
I
input voltage 1.05 - 1.7 V
V
I(startup)min
minimum start-up input
voltage
- 0.9 1.05 V
V
bst
boost voltage V
BAT
= 1.05 V to 1.7 V;
2.65 mA external load
2.75 3.1 3.45 V
I
bst(load)O
output load boost current V
BAT
= 1.05 V to 1.7 V; V
bst
>2.8V - 2.65 - mA
η
bst
boost efficiency V
BAT
= 1.05 V to 1.7 V;
R
L(tot)
= 600 Ω
-70-%
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NE58633BS,115

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Manufacturer:
NXP Semiconductors
Description:
IC AMP AUDIO .04W STER D 32HVQFN
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