VUO105-12NO7
011
2000
4000
6000
8000
10000
12000
V
F
[V]
I
F
[A]
0.4 0.8 1.2 1.6
0
40
80
120
160
200
10
-3
10
-2
10
-1
10
0
600
700
800
900
1000
1100
1200
1 10 100 1000 10000
0.0
0.2
0.4
0.6
0.8
0 25 50 75 100 125 1500 1020304050
0
10
20
30
40
50
0 25 50 75 100 125 150
0
20
40
60
80
100
120
140
I
FSM
[A]
t[s]
t[ms]
I
2
t
[A
2
s]
P
tot
[W]
I
F(AV)M
[A]
T
A
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJC
[K/W]
t[ms]
Fig. 1 Forward current versus
voltagedropperdiode
Fig. 2 Surge overload current
vs. time per diode
Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Constants for Z
thJC
calculation:
iR
th
(K/W) t
i
(s)
1 0.100 0.020
2 0.014 0.010
3 0.192 0.225
4 0.281 0.800
5 0.213 0.580
0.8 x V
RRM
50 Hz
T
VJ
=25°C
T
VJ
=45°C
T
VJ
=45°C
V
R
= 0 V
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
=150°C
T
VJ
=150°C
T
VJ
=
125°C
150°C
R
thJA
:
0.2 KW
0.4 KW
0.6 KW
0.8 KW
1.0 KW
2.0 KW
Rectifier
IXYS reserves the right to change limits, conditions and dimensions.
20130612aData according to IEC 60747and per semiconductor unless otherwise specified
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