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VSMB14940

P1-P3P4-P6
VSMB14940
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 19-Nov-15
1
Document Number: 84210
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW
DESCRIPTION
VSMB14940 is an infrared, 940 nm, side looking emitting
diode in GaAlAs multi quantum well (MQW) technology
with high radiant power and high speed, molded in
clear, untinted PCB based package (with lens) for surface
mounting (SMD).
APPLICATIONS
• Emitter for remote control
• IR touch panels
• Photointerrupters
• Optical switch
FEATURES
• Package type: surface mount
• Package form: side view
• Dimensions (L x W x H in mm): 3.2 x 2.51 x 1.2
• Peak wavelength:
p
= 940 nm
• High reliability
• High radiant power
• Very high radiant intensity
• Angle of half intensity: = ± 9°
• Suitable for high pulse current operation
• Floor life: 168 h, MSL 3, according to J-STD-020
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
• Test conditions see table “Basic Characteristics“
Note
• MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT I
e
(mW/sr) (deg)
p
(nm) t
r
(ns)
VSMB14940 35 ± 9 940 15
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMB14940 Tape and reel MOQ: 1500 pcs, 1500 pcs/reel Side view
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5V
Forward current I
F
70 mA
Surge forward current t
p
= 100 μs I
FSM
500 mA
Power dissipation P
V
112 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
-40 to +85 °C
Storage temperature range T
stg
-40 to +100 °C
Soldering temperature According fig. 10, J-STD-020 T
sd
260 °C
Thermal resistance junction / ambient J-STD-051, soldered on PCB R
thJA
580 K/W
VSMB14940
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 19-Nov-15
2
Document Number: 84210
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage Fig. 4 - Forward Voltage vs. Ambient Temperature
0
20
40
60
80
100
120
0 20406080100
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 580 K/W
0
10
20
30
40
50
70
80
0 20406080100
T
amb
- Ambient Temperature (°C)
I
F
- Forward Current (mA)
R
thJA
= 580 K/W
60
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 20 mA, t
p
= 20 ms V
F
1.05 1.24 1.5 V
I
F
= 70 mA, t
p
= 20 ms V
F
- 1.33 1.6 V
I
F
= 500 mA, t
p
= 100 μs V
F
-1.8-V
Temperature coefficient of V
F
I
F
= 20 mA TK
VF
- -1.12 - mV/K
Reverse current V
R
= 5 V I
R
- - 10 μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 mW/cm
2
C
J
-38-pF
Radiant intensity
I
F
= 20 mA, t
p
= 20 ms I
e
6.5 10.5 14.5 mW/sr
I
F
= 70 mA, t
p
= 20 ms I
e
-35-mW/sr
I
F
= 500 mA, t
p
= 100 μs I
e
-205-mW/sr
Radiant power I
F
= 70 mA, t
p
= 20 ms
e
-28-mW
Temperature coefficient of radiant
power
I
F
= 20 mA TK
e
- 0.39 - %/K
Angle of half intensity -± 9-deg
Peak wavelength I
F
= 70 mA
p
920 940 960 nm
Spectral bandwidth I
F
= 30 mA  -30-nm
Temperature coefficient of
p
I
F
= 30 mA TK
p
-0.30-nm/K
Rise time I
F
= 100 mA, 20 % to 80 % t
r
-15-ns
Fall time I
F
= 100 mA, 20 % to 80 % t
f
-15-ns
V
F
- Forward Voltage (V)
I
F
- Forward Current (mA)
1
10
100
1000
1.0 1.2 1.4 1.6 1.8 2.0
t
p
= 100 µs
T
amb
- Ambient Temperature (°C)
V
F
- Forward Voltage (V)
-60 -40 80 100
1.18
1.22
1.32
1.34
I
F
= 20 mA
1.20
1.30
1.28
1.26
1.24
6040200-20
VSMB14940
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 19-Nov-15
3
Document Number: 84210
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 6 - Radiant Intensity vs. Forward Current
Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature
Fig. 8 - Relative Radiant Power vs. Wavelength
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
T
amb
- Ambient Temperature (°C)
V
F, rel
- Relative Forward Voltage (%)
-60 100
92
98
108
110
96
94
106
104
102
100
806040200-20
I
F
= 20 mA
t
p
= 20 ms
-40
0.1
1
10
100
1000
1 10 100 1000
I
F
- Forward Current (mA)
I
e
- Radiant Intensity (mW/sr)
t
p
= 100 µs
T
amb
- Ambient Temperature (°C)
I
e
- Radiant Intensity (%)
-60 100
70
90
120
130
80
110
100
806040200-20
I
F
= 20 mA
t
p
= 20 ms
-40
0
10
20
30
40
50
60
70
80
90
100
840 880 920 960 1000 1040
λ - Wavelength (nm)
21445
Φ
e rel
- Relative Radiant Power (%)
I
F
= 30 mA
0.6 00.20.4
0.9
0.8
0° 30°10° 20°
40°
50°
60°
70°
80°
0.7
1.0
I
e rel
- Relative Radiant Intensity
ϕ - Angular Displacement
1.2
1.1
P1-P3P4-P6

VSMB14940

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Infrared Emitters 9Degree 35mW 940nm
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