© Semiconductor Components Industries, LLC, 2017
August, 2017 − Rev. 1
1 Publication Order Number:
NVMFS6H818N/D
NVMFS6H818N
Power MOSFET
80 V, 3.7 mW, 123 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
DS(on)
to Minimize Conduction Losses
• Low Q
G
and Capacitance to Minimize Driver Losses
• NVMFS6H818NWF − Wettable Flank Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
80 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
JC
(Notes 1, 3)
Steady
State
T
C
= 25°C
I
D
123
A
T
C
= 100°C 87
Power Dissipation
R
JC
(Note 1)
T
C
= 25°C
P
D
136
W
T
C
= 100°C 68
Continuous Drain
Current R
JA
(Notes 1, 2, 3)
Steady
State
T
A
= 25°C
I
D
20
A
T
A
= 100°C 14
Power Dissipation
R
JA
(Notes 1 & 2)
T
A
= 25°C
P
D
3.8
W
T
A
= 100°C 1.9
Pulsed Drain Current
T
A
= 25°C, t
p
= 10 s
I
DM
900 A
Operating Junction and Storage Temperature T
J
, T
stg
−55 to
+ 175
°C
Source Current (Body Diode) I
S
113 A
Single Pulse Drain−to−Source Avalanche
Energy (I
L(pk)
= 9.3 A)
E
AS
731 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State
R
JC
1.1
°C/W
Junction−to−Ambient − Steady State (Note 2)
R
JA
39
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
MARKING
DIAGRAM
www.onsemi.com
XXXXXX
AYWZZ
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
80 V
3.7 m @ 10 V
123 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5,6)
S
S
S
G
D
D
D
D
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
1
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
XXXXXX = 6H818N
XXXXXX = (NVMFS6H818N) or
XXXXXX = 818NWF
XXXXXX = (NVMFS6H818NWF)
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
