SQJ940EP
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Vishay Siliconix
S13-0567-Rev. A, 18-Mar-13
5
Document Number: 62767
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N-CHANNEL 1 TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Gate Charge
Source Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
0
2
4
6
8
10
0 3 6 9 12 15
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 25 °C
T
J
= 150 °C
- 1.0
- 0.7
- 0.4
- 0.1
0.2
0.5
- 50 - 25 0 25 50 75 100 125 150 175
V
GS(th)
Variance (V)
T
J
- Temperature (°C)
I
D
= 250 μA
I
D
= 5 mA
0.5
0.8
1.1
1.4
1.7
2.0
- 50 - 25 0 25 50 75 100 125 150 175
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
I
D
= 14 A
V
GS
= 4.5 V
V
GS
= 10 V
0.00
0.02
0.04
0.06
0.08
0.10
0246810
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
= 150 °C
T
= 25 °C
40
42
44
46
48
50
52
- 50 - 25 0 25 50 75 100 125 150 175
V
DS
- Drain-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
I
D
= 1 mA
