Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat
lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
for drain 1 cm
2
.
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
Rev. 1 — 5 August 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
V
DS
drain-source voltage T
amb
=25°C--60V
V
GS
gate-source voltage T
amb
=25°C--±20 V
I
D
drain current T
amb
=25°C;
V
GS
=10V
[1]
--350mA
R
DSon
drain-source on-state
resistance
T
j
=25°C;
V
GS
=10V;
I
D
= 500 mA
-11.6Ω
2N7002PV All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 5 August 2010 2 of 16
NXP Semiconductors
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1S1source1
2 G1 gate1
3D2drain2
4S2source2
5 G2 gate2
6D1drain1
123
456
S
1
D
1
G
1
S
2
msd90
1
D
2
G
2
Table 3. Ordering information
Type number Package
Name Description Version
2N7002PV - plastic surface-mounted package; 6 leads SOT666
Table 4. Marking codes
Type number Marking code
2N7002PV ZF
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
DS
drain-source voltage T
amb
=25°C-60V
V
GS
gate-source voltage T
amb
=25°C-±20 V
I
D
drain current V
GS
=10V
[1]
T
amb
=25°C-350mA
T
amb
=100°C-250mA
I
DM
peak drain current T
amb
=25°C;
single pulse; t
p
10 μs
-1.2A

2N7002PV,115

Mfr. #:
Manufacturer:
Nexperia
Description:
MOSFET MOSFET N-CH DUAL 60V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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